Selective Embedded Growth of Al_xGa_<1-x>As by Low-Pressure Organometallic Vapor Phase Epitaxy

スポンサーリンク

概要

• 論文の詳細を見る

• Selective embedded growth of Al_xGa_<1-x>As (X≤0.35) in grooves of patterned substrates has been achieved for the first time by low-pressure organometallic vapor phase epitaxy (LP-OMVPE). Epitaxial Al_xGa<1-x>As layers are embedded only in chemically etched grooves, while no polycrystalline deposition occurs on the masked area. The layers grown in grooves with the reverse-mesa cross sections, formed in the [110] direction, are uniform in thickness and show flat-smooth surfaces throughout. These results indicate that LP-OMVPE is a very promising technique for monolithic device integration.

• 社団法人応用物理学会の論文
• 1986-01-20

著者

• TAKAGISHI Shigenori

  Optoelectronics Joint Research Laboratory

• KAMON Koichi

  Optoelectronics Joint Research Laboratory

• MORI Hideki

  Optoelectronics Joint Research Laboratory

関連論文

• Diagnostics of Gas Reaction Using Trimethylgallium-AsH_3 and Triethylgallium-AsH_3 in Low-Pressure Organometallic Vapor Phase Epitaxy
• Doping Enhancement by Excimer Laser Irradiation in Gas Source Molecular Beam Epitaxy of GaAs
• Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and As_4
• Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and Arsine
• Low-Pressure OMVPE of GaAs Using Triethylgallium
• Effect of Substrate Orientation on Photoluminescence of GaNAs
• Selective Embedded Growth of Al_xGa_As by Low-Pressure Organometallic Vapor Phase Epitaxy
• Effect of Operating Pressure on the Properties of GaAs Grown by Low-Pressure MOCVD
• Influence of H_2 Overpressure on the Properties of GaAs Grown by Low-Pressure MOCVD
• Epitaxial Growth of High-Purity GaAs by Low-Pressure MOCVD

スポンサーリンク