Effect of Operating Pressure on the Properties of GaAs Grown by Low-Pressure MOCVD

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概要

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• Undoped GaAs epitaxial layers were grown by low-pressure MOCVD in a wide range of operating pressure (3×10^<-3> to 75 Torr). These epitaxial layers had smooth surfaces. Conductivity of the epitaxial layers grown under the same [AsH_3]/[TMG] ratio (=75) changed from n-type to p-type at about 5×10^<-1> Torr as operating pressure was reduced. Low temperature photoluminescence spectra indicate that carbon is the dominant acceptor and its concentration increases as operating pressure is reduced.

• 社団法人応用物理学会の論文
• 1983-12-20

著者

• TAKAGISHI Shigenori

  Optoelectronics Joint Research Laboratory

• MORI Hideki

  Optoelectronics Joint Research Laboratory

関連論文

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• Selective Embedded Growth of Al_xGa_As by Low-Pressure Organometallic Vapor Phase Epitaxy
• Effect of Operating Pressure on the Properties of GaAs Grown by Low-Pressure MOCVD
• Influence of H_2 Overpressure on the Properties of GaAs Grown by Low-Pressure MOCVD
• Epitaxial Growth of High-Purity GaAs by Low-Pressure MOCVD

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