Influence of H_2 Overpressure on the Properties of GaAs Grown by Low-Pressure MOCVD

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概要

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• The influence of H_2 overpressure on the electrical and optical properties of GaAs epitaxial layer grown by the low-pressure MOCVD of TMG/AsH_3/H_2 system was studied. It was demonstrated that high H_2 overpressure was not necessary in the reaction process to reduce carbon contamination for low-pressure MOCVD. The carbon incorporation process in low-pressure MOCVD was discussed briefly.

• 社団法人応用物理学会の論文
• 1984-12-20

著者

• TAKAGISHI Shigenori

  Optoelectronics Joint Research Laboratory

• MORI Hideki

  Optoelectronics Joint Research Laboratory

• Mori Hideki

  Optoelectronics Joint Research Laboratory:(present Address)research & Development Group Sumitomo

関連論文

• Diagnostics of Gas Reaction Using Trimethylgallium-AsH_3 and Triethylgallium-AsH_3 in Low-Pressure Organometallic Vapor Phase Epitaxy
• Low-Pressure OMVPE of GaAs Using Triethylgallium
• Effect of Substrate Orientation on Photoluminescence of GaNAs
• Selective Embedded Growth of Al_xGa_As by Low-Pressure Organometallic Vapor Phase Epitaxy
• Effect of Operating Pressure on the Properties of GaAs Grown by Low-Pressure MOCVD
• Influence of H_2 Overpressure on the Properties of GaAs Grown by Low-Pressure MOCVD
• Epitaxial Growth of High-Purity GaAs by Low-Pressure MOCVD

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