Epitaxial Growth of High-Purity GaAs by Low-Pressure MOCVD

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概要

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• High-purity GaAs epitaxial layers were reproducibly obtained at operating pressures lower than conventional low-pressure MOCVD. The epitaxial layer grown at 17 Torr exhibited a high mobility of 105,000 cm^2/V・sec at 77 K and a fine exciton structure in the low-temperature PL spectrum. The conductivity of epitaxial layers grown at 8 Torr changed from p-type to n-type as the [AsH_3]/[TMG] ratio increased. PL spectra indicated that carbon is the dominant acceptor and that carbon concentration and fine exciton structure depend strongly upon the [AsH_3]/[TMG]ratio.

• 社団法人応用物理学会の論文
• 1984-02-20

著者

• TAKAGISHI Shigenori

  Optoelectronics Joint Research Laboratory

• MORI Hideki

  Optoelectronics Joint Research Laboratory

関連論文

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• Effect of Substrate Orientation on Photoluminescence of GaNAs
• Selective Embedded Growth of Al_xGa_As by Low-Pressure Organometallic Vapor Phase Epitaxy
• Effect of Operating Pressure on the Properties of GaAs Grown by Low-Pressure MOCVD
• Influence of H_2 Overpressure on the Properties of GaAs Grown by Low-Pressure MOCVD
• Epitaxial Growth of High-Purity GaAs by Low-Pressure MOCVD

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