Planer-type Ferromagnetic Tunnel Junctions Fabricated by Atomic Force Microscope for Nonvolatile Memory
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概要
- 論文の詳細を見る
- 2001-01-15
著者
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TAKEMURA Yasushi
Electrical and Computer Engineering, Yokohama National University
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SHIRAKASHI Jun-ichi
Electrical and Electronic System Engineering, Tokyo University of Agriculture and Technology
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Shirakashi Jun-ichi
Electronics And Information System Akita Prefectural University
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Takemura Yasushi
Electrical And Computer Engineering Yokohama National University
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Takemura Yasushi
Electrical And Computer Engineering Yokohama University
関連論文
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- Nb/Nb Oxide-based Planar-Type Metal/Insulator/Metal (MIM) Diodes Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process
- Planer-type Ferromagnetic Tunnel Junctions Fabricated by Atomic Force Microscope for Nonvolatile Memory
- Characterization of Polarity of Plasma-Assisted Molecular Beam Epitaxial GaN{0001}Film Using Coaxial Impact Collision Ion Scattering Spectroscopy
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- Room Temperature Operation of Amorphous Carbon-Based Single-Electron Transistors Fabricated by Beam-Induced Deposition Techniques
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