Field Emission from Silicon Carbide (SiC) Micropowders

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概要

• 論文の詳細を見る

• Field emission characteristics of a cathode consisting of SiC micropowders with sharp edges were examined. Emission current from the cathode followed the Fowler–Nordheim relationship; therefore, it was confirmed that the SiC micropowders acted as the field electron source. A field enhancement factor of ${\sim}1000$ was obtained. This value was comparable to that of conventional emitters. A good short-term stability of the fluctuation in the emission current from the cathode, which was less than 7% of the total emission current, was determined.

• Japan Society of Applied Physicsの論文
• 2006-05-25

著者

• Yoshimoto Tomomi

  School Of Engineering Hokkaido Tokai University

• Iwata Tatsuo

  School Of Engineering Hokkaido Tokai University

• Yokogawa Naohiro

  Kyosemi Corporation, Eniwa Operation, 385-31 Toiso, Eniwa, Hokkaido 061-1405, Japan

関連論文

• Emission Properties from Carbon Nanotube Field Emitter Arrays (FEAS) Grown on Si Emitters : Surfaces. Interfaces, and Films
• Si Metal Insulator Semiconductor Tunnel Emitter Transistor (Si MIS TET)
• Field-Emission Characteristics of Carbon Nanotube Single Tip Grown on Si Cone
• Field Emission from Silicon Carbide (SiC) Micropowders

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