Needle-Like SiC Nanorods(Atoms, Molecules, Chemical Physics)
スポンサーリンク
概要
- 論文の詳細を見る
SiC nanorods with a needle-like shape have been synthesized by carbothermal reduction of SiO at 1410℃, where the reductant is highly curled carbon nanotubes (CNTs) containing Fe nanoparticles approximately 10nm in size. Each SiC nanorod has a rounded Fe-Si single crystalline tip 120-250nm in size and a sharp SiC tip approximately 10nm in size. Along the nanorod axis, the diameter decreases gradually from approximately 100 nm on the Fe-Si tip side to approximately 10 nm on the sharp SiC tip. A revised vapor-liquid-solid mechanism from Wagner's mechanism is proposed to explain the formation of the SiC nanorods.
- 社団法人応用物理学会の論文
- 2001-10-01
著者
-
Bando Y
Advanced Materials Laboratory And Nanomaterials Laboratory National Institute For Materials Science
-
Bando Yoshio
National Institute Of Materials Science
-
Bando Y
National Inst. Materials Sci. Ibaraki Jpn
-
Kitami Yoshizo
Advanced Materials Laboratory And Nanomaterials Laboratory National Institute For Materials Science
-
Bando Yoshio
International Center For Materials Nanoarchitectonics National Institute For Materials Science (nims
-
Bando Yoshio
Advanced Materials Laboratory And Nanomaterials Laboratory National Institute For Materials Science
-
Bando Yoshio
Advanced Materials Laboratory National Institute For Materials Science
-
GAO Yihua
Advanced Materials Laboratory and Nanomaterials Laboratory, National Institute for Materials Science
-
SATO Tadao
Advanced Materials Laboratory and Nanomaterials Laboratory, National Institute for Materials Science
-
Gao Y
Advanced Materials Laboratory And Nanomaterials Laboratory National Institute For Materials Science
-
Sato Tadao
Advanced Materials Laboratory And Nanomaterials Laboratory National Institute For Materials Science
関連論文
- Formation of Boron Nitride (BN) Fullerene-Like Nanoparticles and (BN)_xC_y Nanotubes Using Carbon Nanotubes as Templates
- Hole-doping and Pressure Effects on the Metal-Insulator Transition in Single Crystals of Y_Ca_xTiO_3(0.37 ≤ x ≤ 0.41)(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Hole-doping and Pressure Effects on the Metal-Insulator Transition in Single Crystals of Y_Ca_xTiO_3 (0.37≦x≦0.41)
- Transport and Magnetic Properties of a Low-Density Carrier System SmBiPt
- Plasma Etching of TEM Samples for Observing Grain Boundaries in Silicon Nitride
- Grain Boundary Structure and Solute Segregation in CuO Doped 3 mol% Yttria Stabilized Zirconia
- High-resolution analytical electron microscopy of boron nitrides laser heated at high pressure
- The Symmetry of Polyhedral Cages Made from Crystals
- Superconductivity in the Bi-Sr-La-Cu-O System : Electrical Properties of Condensed Matter
- Identification of a High-T_c Superconducting Phase in the Bi-Ca-Sr-Cu-O System : Electrical Properties of Condensed Matter
- Structure and Composition Analysis of High-T_c Superconducting Bi-Ca-Sr-Cu-O Oxide by High-Resolution Analytical Electron Microscopy : Electrical Properties of Condensed Matter
- A 400 kV High Resolution-Analytical Electron Microscope Newly Constructed
- Dilution Effects on Chemical and Magnetic Clusters of α-LiFeO_2
- Initial Growth and Dislocation Accommodation of GaAs on Si(100) by Molecular Beam Epilaxy
- Magnetic Behavior of Fe Doped In_2O_3
- Magnetic Cluster Behavior of α-LiFeO_2 Related to the Cation Arrangements
- A Quantitative Study of Precipitation of Metastable Phases in an Al-1.94at%Cu Alloy during Isothermal Aging at 373K
- In situ electrical measurements and manipulation of B/Ndoped C nanotubes in a high-resolution transmission electron microscope
- New 300kV Energy-Filtering Field Emission Electron Microscope : Instrumentation, Measurement, and Fabrication Technology
- Temperature dependency of radiation damage in inorganic materials by 300 keV electrons
- High-resolution Observation of SrTiO_3 Interface by Convergent Beam Illumination
- New fullerenes in the B-C-N system: synthesis and analysis by an electron beam
- A Newly Developed 300 kV Field-Emission Analytical Transmission Electrom Microscope
- Reduction Mechanism of Dislocation Density in GaAs Films on Si Substrates
- Microstucture Analysis of Advanced Ceramics by High-Resolution Analytical Transmission Electron Microscopy
- High-Resolution Holography Observation of H-Nb_2O_5
- Structural imperfection of β-Si_3N_4 crystals associated with nucleation
- Some Results Obtained by a Newly Constructed Ultra-High-Resolution 1300 kV Electron Microscope
- A High Resolution Lattice Image of Nb_O_ by Means of a High Voltage Electron Microscope Newly Constructed
- Synthesis and microstructure of Cd_4SiS_6/Si composite nanowires
- In situ high-temperature X-ray observation of crystallization during the fabrication of non-silica(20ZnO-80TeO_2) glass-preform of optical devices
- B25 Well-crystallized Transition-metal Layered Double Hydroxides and Their Exfoliation
- Reflection High-Energy Electron Diffraction Intensity Oscillations during Ge_xSi_ MBE Growth on Si(001) Substrates
- In Situ High-Temperature X-ray Observations of Crystallization of Zinctellurite Glass
- Preface to HAFN special issue
- Formation of ZnO nanocrystallites on ZnS surfaces by electron beam irradiation
- Bamboo-like boron nitride nanotubes (Eighth Conference on Frontiers of Electron Microscopy in Materials Science)
- Cathodoluminescence study of one-dimensional freestanding widegap-semiconductor nanostructures : GaN nanotubes, Si_3N_4 nanobelts and ZnS/Si nanowires
- Needle-Like SiC Nanorods(Atoms, Molecules, Chemical Physics)
- Grain Boundary Analysis of Silicon Nitrides by 400kV Analytical Electron Microscopy
- A modulated structure of In_2O_3(ZnO)_m as revealed by high-resolution electron microscopy
- A New Cubic B-C-N Compound Revealed by High-Resolution Analytical Electron Microscopy