Dependence of the Saturation of Light-Induced Defect Density in a-Si:H on Temperature and Light Intensity
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-11-15
著者
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Isomura Masao
Department Of Electrical And Electronic Engineering Tokai University
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Isomura Masao
Department Of Electrical Engineering Princeton University:(present Address) Functional Materials Res
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Hata N
Electrotechnical Lab. Ibaraki Jpn
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Hata Nobuhiro
Department Of Neurosurgery Clinical Research Institute National Kyushu Medical Center Hospital:(pres
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Hata Nobuhiro
Department Of Electrical Engineering Princeton University:(present Address) Electrotechnical Laborat
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WAGNER Sigurd
Department of Electrical Engineering, Princeton University
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Wagner Sigurd
Department Of Electrical Engineering And Computer Science Princeton University
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Wagner Sigurd
Department Of Electrical Engineering Princeton University
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