Accuracy Evaluation of Representative Figure Method for Proximity Effect Correction

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概要

• 論文の詳細を見る

• The correction accuracy of the representative figure method is studied. In order to evaluate pattern size deviation using the small area size as a parameter, we carry out a systematic experiment using a 0.2 μm line-and-space pattern. It is found that the small area size of an element and a reference rectangle can be maximized at 5 μm and 15 μm, respectively, to suppress the pattern size deviation below 10%, or 0.02 μm. The large area sizes obtained here result in the reduction of calculation time for correction. The correction time itself can be reduced to 1/16 of that in our previous work. When a 4 CPU (50 MIPS per CPU) computer is used, the total calculation time can be completed in less than 15 min for a chip of 15×15 mm^2 size.

• 社団法人応用物理学会の論文
• 1995-12-30

著者

• Abe Takayuki

  Ulsi Research Center Toshiba Corp.

• YAMASAKI Satoshi

  ULSI research Center, Toshiba Corp.

• NAKASUGI Tetsuro

  ULSI Process Engineering Laboratory, Microelectronics Engineering Laboratory, TOSHIBA Corporation

• Abe Takayuki

  Advanced Ulsi Process Engineering Department Ii Process And Manufacturing Engineering Center Semicon

• Abe Takayuki

  Institute Of Physics College Of General Education University Of Tokyo

• Abe Takayuki

  Institute Of Physics College Of Arts And Sciences University Of Tokyo:(present Office)nuflare Techno

• Yamasaki Satoshi

  Ulsi Research Labs. R&d Center Toshiba Corp.

• Abe Takayuki

  Ulsi Research Labs. R&d Center Toshiba Corp.

• Abe Takayuki

  Institute Of Physics College Of Arts And Sciences University Of Tokyo

• Abe Takayuki

  Ulsi Research Center Toshiba Corporarion

• Nakasugi Tetsuro

  Ulsi Research Labs. R&d Center Toshiba Corp.

• Abe Takayuki

  Advanced Semiconductor Devices Research Laboratories, R&D Center, Toshiba Corporation

• Yamasaki Satoshi

  ULSI Device Development Laboratories, NEC Corporation

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• Improved Electron-Beam/Deep-Ultraviolet Intralevel Mix-and-Match Lithography with 100 nm Resolution
• High-Speed Convolution System for Real-Time Proximity Effect Correction
• Proximity Effect Correction For Electron Beam Lithography: Highly Accurate Correction Method
• Charge-reducing Effect of Chemically Amplified Resist in Electron-Beam Lithography
• Optimization of a High-Performance Chemically Amplified Positive Resist for Electron-Beam Lithography
• Nuclear Relaxation Time of Solid ^3He : The Second and Fourth Moments of the Resonance Line(Condensed Matter Physics)
• New Factorized S-Matrix and Its Application to Exactly Solvable q-State Model. II
• New Factorized S-Matrix and Its Application to Exactly Solvable q-State Model. I
• The Exchange Narrowing of T_1 in Solid Helium-3: The Fourth Moment of the Resonance Line
• Accuracy Evaluation of Representative Figure Method for Proximity Effect Correction
• A Model for Phase Transition on Sierpinski Gaskets

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