Optimization of a High-Performance Chemically Amplified Positive Resist for Electron-Beam Lithography
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-12-30
著者
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KIHARA Naoko
Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation
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NAKASE Makoto
Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation
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NAITO Takuya
Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation
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Sato S
Ulsi Process Engineering Laboratory Microelectronics Engineering Laboratory Toshiba Corporation
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TAMURA Hitoshi
ULSI Research Laboratories, TOSHIBA Corporation
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Saito Shozo
Shizuoka Industrial Research Institute
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NIIYAMA Hiromi
ULSI Process Engineering Laboratory, Microelectronics Engineering Laboratory, TOSHIBA Corporation
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NAKASUGI Tetsuro
ULSI Process Engineering Laboratory, Microelectronics Engineering Laboratory, TOSHIBA Corporation
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Tamura Hitoshi
Ulsi Process Engineering Lab. Microelectronics Engineering Lab. Toshiba Corp.
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Sato S
Pharmaceutical Research Laboratories Ajinomoto Co. Inc.
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Kihara N
Sony Corp. Tokyo Jpn
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Kihara Naoko
Materials And Devices Research Laboratories Research And Development Center Toshiba Corporation
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Naito T
Hitachi Ltd. Ibaraki Jpn
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Naito Takuya
Materials And Devices Research Laboratories Research And Development Center Toshiba Corporation
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Niiyama Hiromi
Ulsi Process Engineering Lab. Microelectronics Engineering Lab. Toshiba Corp.
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SAITO Satoshi
Materials & Devices Laboratory, R&D center, Toshiba Corporation
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Nakase M
Materials And Devices Research Laboratories Research And Development Center Toshiba Corporation
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Nakasugi Tetsuro
Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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Kihara Naoko
Materials & Devices Laboratory, R&D center, Toshiba Corporation
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Niyama Hiromi
ULSI Process Engineering Lab., Microelectronics Engineering Lab., Toshiba Corp.
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