Silicon-Based Single-Electron-Tunneling Transistor Operated at 4.2 K
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概要
- 論文の詳細を見る
We have fabricated single-electron-tunneling transistors using silicon which is a useful material for device applications. The device is composed of thin polycrystalline silicon film patterned by electron-beam lithography and its thermally grown oxidized film. We have observed, in this device, periodic conductance oscillations as a function of gate voltage and nonlinear resistances as a function of drain voltage at 4.2 K. These experimental results are in agreement with the theory of Coulomb blockade. We conclude that the observed behavior results from the charging energy of single-electron tunneling.
- 社団法人応用物理学会の論文
- 1995-08-30
著者
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Toriumi Akira
Ulsi Research Laboratories Toshiba Corporation
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Toriumi Akira
Ulsi Research Center Toshiba Corporation
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NIIYAMA Hiromi
ULSI Process Engineering Laboratory, Microelectronics Engineering Laboratory, TOSHIBA Corporation
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Ohata Akiko
Ulsi Research Laboratories Toshiba Corporation
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Niiyama Hiromi
Ulsi Process Engineering Lab. Microelectronics Engineering Lab. Toshiba Corp.
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Niiyama Hiromi
Ulsi Research Laboratories Toshiba Corporation
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NAKAJIMA Kazuaki
ULSI Research Laboratories, Toshiba Corporation
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SHIBATA Toru
ULSI Research Laboratories, Toshiba Corporation
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Nakajima Kazuaki
Ulsi Research Laboratories Toshiba Corporation
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Shibata Toru
Ulsi Research Laboratories Toshiba Corporation
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