Evidence for Asymmetrical Hydrogen Profile in Thin D_2O Oxidized SiO_2 by SIMS and Modified TDS
スポンサーリンク
概要
- 論文の詳細を見る
- 1996-08-26
著者
-
Toriumi Akira
Ulsi Research Laboratories Toshiba Corporation
-
Toriumi Akira
Ulsi Research Center Toshiba Corporation
-
TAKAGI Shin-ichi
ULSI Research Laboratories, TOSHIBA Corporation
-
Muraoka Kouichi
Ulsi Research Laboratories Toshiba Corporation
-
Takagi Shin-ichi
Ulsi Research Laboratories Toshiba Corporation
関連論文
- Two Correlated Mechanisms in Thin SiO_2 Breakdown
- Reliability of Structurally Modified Ultra-Thin Gate Oxides
- Observation of Oxide-Thickness-Dependent Interface Roughness in Si MOS Structure
- Observation of Oxide Thickness Dependent Interface Roughness in Si MOS Structure
- Existence of Double-Charged Oxide Traps in Submicron MOSFET's (SOLID STATE DEVICES AND MATERIALS 1)
- Coulomb Blockade Effects in Edge Quantum Wire SOI MOSFETs
- Silicon-Based Single-Electron-Tunneling Transistor Operated at 4.2 K
- Evidence for Asymmetrical Hydrogen Profile in Thin D_2O Oxidized SiO_2 by SIMS and Modified TDS
- Three-Terminal Silicon Esaki Tunneling Device
- Significant Effect of OH inside Silicon Chemical Oxides on AHF(Anhydrous Hydrofluoric Acid) Etching
- Coulomb Blockade Effects in Edge Quantum Wire SOl-MOSFETs (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- Coulomb Blockade Effects in Edge Quantum Wire SOI MOSFETs
- Observation of Oxide-Thickness-Dependent Interface Roughness in Si MOS Structure