Coulomb Blockade Effects in Edge Quantum Wire SOI MOSFETs
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-03-30
著者
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Toriumi Akira
Ulsi Research Laboratories Toshiba Corporation
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Toriumi Akira
Ulsi Research Center Toshiba Corporation
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Ohata Akiko
Ulsi Research Laboratories Toshiba Corporation
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UCHIDA Ken
ULSI Research Laboratories, Toshiba Corporation
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Uchida Ken
Ulsi Research Laboratories Toshiba Corporation
関連論文
- Two Correlated Mechanisms in Thin SiO_2 Breakdown
- Reliability of Structurally Modified Ultra-Thin Gate Oxides
- Observation of Oxide-Thickness-Dependent Interface Roughness in Si MOS Structure
- Observation of Oxide Thickness Dependent Interface Roughness in Si MOS Structure
- Existence of Double-Charged Oxide Traps in Submicron MOSFET's (SOLID STATE DEVICES AND MATERIALS 1)
- Coulomb Blockade Effects in Edge Quantum Wire SOI MOSFETs
- Silicon-Based Single-Electron-Tunneling Transistor Operated at 4.2 K
- Evidence for Asymmetrical Hydrogen Profile in Thin D_2O Oxidized SiO_2 by SIMS and Modified TDS
- Three-Terminal Silicon Esaki Tunneling Device
- Coulomb Blockade Effects in Edge Quantum Wire SOl-MOSFETs (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- Coulomb Blockade Effects in Edge Quantum Wire SOI MOSFETs
- Observation of Oxide-Thickness-Dependent Interface Roughness in Si MOS Structure