Observation of Oxide-Thickness-Dependent Interface Roughness in Si MOS Structure
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概要
- 論文の詳細を見る
The relationship between roughness at the Si/SiO2 interface and the oxide thickness was investigated by means of a nondestructive measuring method, using the Si metal-oxide-semiconductor (MOS) structure. It was demonstrated that the Si/SiO2 interface roughness recovers during thermal oxidation. This recovery process was also verified by observation with the transmission electron microscope (TEM). It was found that the recovery effect on the roughness at the Si/SiO2 interface depends on the oxidation process and that it is more significant in wet oxidation than in dry oxidation.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
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Toriumi Akira
Ulsi Research Center Toshiba Corporation
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Koga Junji
Ulsi Research Laboratories Toshiba Corporation
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Takagi Shin-ichi
Ulsi Research Laboratories Toshiba Corporation
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Koga Junji
ULSI Research Laboratories, Toshiba Corporation,
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