Coulomb Blockade Effects in Edge Quantum Wire SOl-MOSFETs (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)

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概要

• 論文の詳細を見る

• The edge of a thin SOI (silicon on insulator)film was used to form a very narrow Si-MOS inversion layer.The ultra-thin SOI film was formed by local oxidation of SIMOX wafer. The thickness of the SOI film is less than 15 nm,i.e., the channel width is narrower than 15 nm. At low temperatures, clear and large conductance oscillations were seen in this edge channel MOSFET. These oscillations are explained by Coulomb blockade effects in the narrow channel with several effective potential barriers, since the SOI film is so thin that the channel current is seriously affected by small potential fluctuations in the channel. These results suggest that the channel current in edge quantum wire MOSFET can be cut off even with a small controlled potential change. Furthermore, we fabricated a double-gate edge channel Si-MOSFET. In this device, the channel current can be controlled in two ways. One way is to control the electron number inside the isolated electrodes. The other way is to control the threshold voltage of MOSFET. This device enables us to control the phase of Coulomb oscillation.

• 社団法人電子情報通信学会の論文
• 1996-11-25

著者

• Toriumi Akira

  Ulsi Research Laboratories Toshiba Corporation

• Toriumi Akira

  Ulsi Research Center Toshiba Corporation

• Ohata A

  Inst. Physics And Chemical Res. Saitama Jpn

• Ohata Akiko

  Ulsi Research Laboratories Toshiba Corporation

• TORIUMI Akira

  ULSI Research Laboratories,Toshiba Corporation

関連論文

• Two Correlated Mechanisms in Thin SiO_2 Breakdown
• Reliability of Structurally Modified Ultra-Thin Gate Oxides
• Observation of Oxide-Thickness-Dependent Interface Roughness in Si MOS Structure
• Observation of Oxide Thickness Dependent Interface Roughness in Si MOS Structure
• Existence of Double-Charged Oxide Traps in Submicron MOSFET's (SOLID STATE DEVICES AND MATERIALS 1)
• Coulomb Blockade Effects in Edge Quantum Wire SOI MOSFETs
• Silicon-Based Single-Electron-Tunneling Transistor Operated at 4.2 K
• Evidence for Asymmetrical Hydrogen Profile in Thin D_2O Oxidized SiO_2 by SIMS and Modified TDS
• Three-Terminal Silicon Esaki Tunneling Device
• Coulomb Blockade Effects in Edge Quantum Wire SOl-MOSFETs (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
• Coulomb Blockade Effects in Edge Quantum Wire SOI MOSFETs
• Observation of Oxide-Thickness-Dependent Interface Roughness in Si MOS Structure

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