Coulomb Blockade Effects in Edge Quantum Wire SOI MOSFETs

スポンサーリンク

概要

• 論文の詳細を見る
• 1996-08-26

著者

• Toriumi Akira

  Ulsi Research Laboratories Toshiba Corporation

• Toriumi Akira

  Ulsi Research Center Toshiba Corporation

• Ohata Akiko

  Ulsi Research Laboratories Toshiba Corporation

関連論文

• Two Correlated Mechanisms in Thin SiO_2 Breakdown
• Reliability of Structurally Modified Ultra-Thin Gate Oxides
• Observation of Oxide-Thickness-Dependent Interface Roughness in Si MOS Structure
• Observation of Oxide Thickness Dependent Interface Roughness in Si MOS Structure
• Existence of Double-Charged Oxide Traps in Submicron MOSFET's (SOLID STATE DEVICES AND MATERIALS 1)
• Coulomb Blockade Effects in Edge Quantum Wire SOI MOSFETs
• Silicon-Based Single-Electron-Tunneling Transistor Operated at 4.2 K
• Evidence for Asymmetrical Hydrogen Profile in Thin D_2O Oxidized SiO_2 by SIMS and Modified TDS
• Three-Terminal Silicon Esaki Tunneling Device
• Coulomb Blockade Effects in Edge Quantum Wire SOl-MOSFETs (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
• Coulomb Blockade Effects in Edge Quantum Wire SOI MOSFETs
• Observation of Oxide-Thickness-Dependent Interface Roughness in Si MOS Structure

もっと見る 閉じる

スポンサーリンク