Dissolution Inhibitors for 193-nm Chemically Amplified Resists
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-12-30
著者
-
Asakawa K
Toshiba Corp. Kawasaki Jpn
-
USHIROGOUCHI Tohru
Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation
-
ASAKAWA Koji
Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation
-
OKINO Takeshi
Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation
-
SHIDA Naomi
Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation
-
KIHARA Naoko
Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation
-
NAKASE Makoto
Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation
-
Shida N
Toshiba Corp. Kawasaki Jpn
-
Kihara Naoko
Materials And Devices Research Laboratories Research And Development Center Toshiba Corporation
-
Okino T
Toshiba Corp. Kanagawa Jpn
-
Asakawa K
Center For Tsukuba Advanced Research Alliance (tara) University Of Tsukuba
-
Ushirogouchi T
Toshiba Corp. Kawasaki Jpn
-
Nakase M
Materials And Devices Research Laboratories Research And Development Center Toshiba Corporation
-
Kihara Naoko
Materials & Devices Laboratory, R&D center, Toshiba Corporation
関連論文
- Advanced Materials for l93-nm Resists
- Dissolution Inhibitors for 193-nm Chemically Amplified Resists
- Highty Transparent Chemically Amplified ArF Excimer Laser Resists by Absorption Band Shift for 193 nm Wavelength
- Ultra-Small GaAs-Photonic-Crystal-Slab-Waveguide-Based Near-Infrared Components : Fabrication, Guided-Mode Identification, and Estimation of Low-Loss and Broad-Band-Width in Straight-Waveguides, 60°-Bends and Y-Splitters
- Ultra-Small Photonic-Crystal-Waveguide-Based Y-Splitters Useful in the Near-Infrared Wavelength Region
- Two Dimensional Semiconductor-Based Photonic Crystal Slab Waveguides for Ultra-Fast Optical Signal Processing Devices(Photonic Crystals and Their Device Applications)
- Fabrication and Characterization of AlGaAs-based Photonic Crystal Slab Waveguides by Precisely Controlled Self-Aligned Selective-Oxidation Process
- 650 nm AlGaInP Visible Light Laser Diode with Dry-Etched Mesa Stripe
- Thermal Decomposition of Dissolution Inhibitor in Chemically Amplified Resist during Prebake Process
- Chlorine-Based Dry Etching of III/V Compound Semiconductors for Optoelectronic Application
- Record Low Threshold Current in Microcavity Surface-Emitting Laser
- Chlorine-Based Smooth Reactive Ion Beam Etching of Indium-Containing III-V Compound Semiconductor
- Simulation Study on Phase-Shifting Masks for Isolated Patterns : Photolithography
- Simulation Study on Phase-Shifting Masks for Isolated Patterns
- In situ Metal Mask for Selective Area Growth of Thin Epitaxial Layers
- Optical-Nonlinearity-Induced Phase Shift via Selective Area Grown InAs-QDs in a Photonic Crystal Waveguide
- InAs Nano-Dot Array Formation Using Nano-Jet Probe for Photonics Applications
- Control of InAs Quantum Dot Emission Wavelengths in Narrow Regions by Selective Formation of GaInAs Covered Layers Growth with in situ Mask
- Wavelength-Dependent Coupling Characteristics in Two-Dimensional Photonic-Crystal Slab Directional Coupler
- Single Photonic-Crystal Defect Switch for All-Optical Ultrafast Operation Using Two Photon Absorption(Ultrafast Photonics)
- Two-Dimensional InGaAs Quantum-Dot Arrays with Periods of 70-100nm on Artificially Prepared Nanoholes
- Nano-patterned Medium Fabricated by the Artificially Aligned Self-Assembling Method
- GaAs Surface Cleaning/Etching Using Plasma-Dissociated Cl Radical
- Charge-reducing Effect of Chemically Amplified Resist in Electron-Beam Lithography
- Optimization of a High-Performance Chemically Amplified Positive Resist for Electron-Beam Lithography
- Recent Progress in KrF Excimer Laser Lithography (Special Issue on Opto-Electronics and LSI)