Control of InAs Quantum Dot Emission Wavelengths in Narrow Regions by Selective Formation of GaInAs Covered Layers Growth with in situ Mask
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-07-30
著者
-
Asakawa K
Center For Tsukuba Advanced Research Alliance (tara) University Of Tsukuba
-
OHKOUCHI Shunsuke
The Femtosecond Technology Research Association (FESTA)
-
NAKAMURA Yusui
The Femtosecond Technology Research Association (FESTA)
-
NAKAMURA Hitoshi
The Femtosecond Technology Research Association (FESTA)
-
ASAKAWA Kiyoshi
The Femtosecond Technology Research Association (FESTA)
関連論文
- Advanced Materials for l93-nm Resists
- Dissolution Inhibitors for 193-nm Chemically Amplified Resists
- Highty Transparent Chemically Amplified ArF Excimer Laser Resists by Absorption Band Shift for 193 nm Wavelength
- Ultra-Small GaAs-Photonic-Crystal-Slab-Waveguide-Based Near-Infrared Components : Fabrication, Guided-Mode Identification, and Estimation of Low-Loss and Broad-Band-Width in Straight-Waveguides, 60°-Bends and Y-Splitters
- Ultra-Small Photonic-Crystal-Waveguide-Based Y-Splitters Useful in the Near-Infrared Wavelength Region
- Two Dimensional Semiconductor-Based Photonic Crystal Slab Waveguides for Ultra-Fast Optical Signal Processing Devices(Photonic Crystals and Their Device Applications)
- Fabrication and Characterization of AlGaAs-based Photonic Crystal Slab Waveguides by Precisely Controlled Self-Aligned Selective-Oxidation Process
- 650 nm AlGaInP Visible Light Laser Diode with Dry-Etched Mesa Stripe
- Chlorine-Based Dry Etching of III/V Compound Semiconductors for Optoelectronic Application
- Record Low Threshold Current in Microcavity Surface-Emitting Laser
- Chlorine-Based Smooth Reactive Ion Beam Etching of Indium-Containing III-V Compound Semiconductor
- In situ Metal Mask for Selective Area Growth of Thin Epitaxial Layers
- Optical-Nonlinearity-Induced Phase Shift via Selective Area Grown InAs-QDs in a Photonic Crystal Waveguide
- InAs Nano-Dot Array Formation Using Nano-Jet Probe for Photonics Applications
- Control of InAs Quantum Dot Emission Wavelengths in Narrow Regions by Selective Formation of GaInAs Covered Layers Growth with in situ Mask
- Wavelength-Dependent Coupling Characteristics in Two-Dimensional Photonic-Crystal Slab Directional Coupler
- Single Photonic-Crystal Defect Switch for All-Optical Ultrafast Operation Using Two Photon Absorption(Ultrafast Photonics)
- Two-Dimensional InGaAs Quantum-Dot Arrays with Periods of 70-100nm on Artificially Prepared Nanoholes
- Nano-patterned Medium Fabricated by the Artificially Aligned Self-Assembling Method
- GaAs Surface Cleaning/Etching Using Plasma-Dissociated Cl Radical
- InAs-Dot/GaAs Structures Site-Controlled by in situ Electron-Beam Lithography and Self-Organizing Molecular Beam Epitaxy Growth
- Control of InAs Quantum Dot Emission Wavelengths in Narrow Regions by Selective Formation of GaInAs Covered Layers Grown with in situ Mask
- Two-Dimensional InGaAs Quantum-Dot Arrays with Periods of 70–100 nm on Artificially Prepared Nanoholes
- Ultra-Small Photonic-Crystal-Waveguide-Based Y-Splitters Useful in the Near-Infrared Wavelength Region
- Fabrication and Characterization of AlGaAs-based Photonic Crystal Slab Waveguides by Precisely Controlled Self-Aligned Selective-Oxidation Process
- Ultra-Small GaAs-Photonic-Crystal-Slab-Waveguide-Based Near-Infrared Components: Fabrication, Guided-Mode Identification, and Estimation of Low-Loss and Broad-Band-Width in Straight-Waveguides, 60°-Bends and Y-Splitters
- InAs Nano-Dot Array Formation Using Nano-Jet Probe for Photonics Applications