InAs Nano-Dot Array Formation Using Nano-Jet Probe for Photonics Applications
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概要
- 論文の詳細を見る
We propose herein a new nano-probe-assisted technique that enables the formation of site-controlled InAs quantum dots. High-density two-dimensional indium (In) nano-dot arrays on a GaAs substrate were fabricated using a specially designed atomic-force-microscope probe, referred to as the Nano-Jet Probe. This probe has a hollow pyramidal tip with a submicron-sized aperture at the apex and an In-reservoir tank within the stylus. A voltage pulse was applied between the pyramidal tip and the sample to extract In clusters from the reservoir tank within the stylus through the aperture, resulting in In nano-dot formation. These In nano-dots were converted directly into InAs arrays by the subsequent annealing with irradiation of arsenic flux. The proposed technique has potential applications in photonics, including regular arrays of quantum bits and single photon emitters for quantum computers and quantum communications.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-07-15
著者
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OHKOUCHI Shunsuke
The Femtosecond Technology Research Association (FESTA)
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NAKAMURA Yusui
The Femtosecond Technology Research Association (FESTA)
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NAKAMURA Hitoshi
The Femtosecond Technology Research Association (FESTA)
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ASAKAWA Kiyoshi
The Femtosecond Technology Research Association (FESTA)
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Ohkouchi Shunsuke
The Femtosecond Technology Research Association (FESTA), 5-5 Tokodai, Tsukuba, Ibaraki 300-2635, Japan
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Asakawa Kiyoshi
The Femtosecond Technology Research Association (FESTA), 5-5 Tokodai, Tsukuba, Ibaraki 300-2635, Japan
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Nakamura Hitoshi
The Femtosecond Technology Research Association (FESTA), 5-5 Tokodai, Tsukuba, Ibaraki 300-2635, Japan
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NAKAMURA Hitoshi
The Femtosecond Technology Research Association
関連論文
- Ultra-Small GaAs-Photonic-Crystal-Slab-Waveguide-Based Near-Infrared Components : Fabrication, Guided-Mode Identification, and Estimation of Low-Loss and Broad-Band-Width in Straight-Waveguides, 60°-Bends and Y-Splitters
- Fabrication and Characterization of AlGaAs-based Photonic Crystal Slab Waveguides by Precisely Controlled Self-Aligned Selective-Oxidation Process
- InAs Nano-Dot Array Formation Using Nano-Jet Probe for Photonics Applications
- Control of InAs Quantum Dot Emission Wavelengths in Narrow Regions by Selective Formation of GaInAs Covered Layers Growth with in situ Mask
- Wavelength-Dependent Coupling Characteristics in Two-Dimensional Photonic-Crystal Slab Directional Coupler
- Two-Dimensional InGaAs Quantum-Dot Arrays with Periods of 70-100nm on Artificially Prepared Nanoholes
- InAs-Dot/GaAs Structures Site-Controlled by in situ Electron-Beam Lithography and Self-Organizing Molecular Beam Epitaxy Growth
- Control of InAs Quantum Dot Emission Wavelengths in Narrow Regions by Selective Formation of GaInAs Covered Layers Grown with in situ Mask
- Two-Dimensional InGaAs Quantum-Dot Arrays with Periods of 70–100 nm on Artificially Prepared Nanoholes
- Ultra-Small Photonic-Crystal-Waveguide-Based Y-Splitters Useful in the Near-Infrared Wavelength Region
- Fabrication and Characterization of AlGaAs-based Photonic Crystal Slab Waveguides by Precisely Controlled Self-Aligned Selective-Oxidation Process
- Ultra-Small GaAs-Photonic-Crystal-Slab-Waveguide-Based Near-Infrared Components: Fabrication, Guided-Mode Identification, and Estimation of Low-Loss and Broad-Band-Width in Straight-Waveguides, 60°-Bends and Y-Splitters
- InAs Nano-Dot Array Formation Using Nano-Jet Probe for Photonics Applications