Two-Dimensional InGaAs Quantum-Dot Arrays with Periods of 70–100 nm on Artificially Prepared Nanoholes
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概要
- 論文の詳細を見る
We have fabricated two-dimensional InGaAs quantum-dot (QD) arrays with periods of 70 nm and 100 nm, where the nucleation probability of QDs reached ${\sim}100$%. This regular QD array was realized by controlling the nucleation sites on artificially prepared nanohole arrays on GaAs (001) substrates using low-temperature deposition of In0.33Ga0.67As and subsequent annealing. On the regular QD array with the 100 nm periodicity, three InGaAs QD layers were stacked. A cross-sectional image of the stacked sample revealed vertical alignment of the QDs, which showed a clear photoluminescence peak at room temperature.
- Japan Society of Applied Physicsの論文
- 2004-03-01
著者
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OHKOUCHI Shunsuke
The Femtosecond Technology Research Association (FESTA)
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NAKAMURA Yusui
The Femtosecond Technology Research Association (FESTA)
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NAKAMURA Hitoshi
The Femtosecond Technology Research Association (FESTA)
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ASAKAWA Kiyoshi
The Femtosecond Technology Research Association (FESTA)
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SUGIMOTO Yoshimasa
The Femtosecond Technology Research Association
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IKEDA Naoki
The Femtosecond Technology Research Association
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Nakamura Yusui
The Femtosecond Technology Research Association, Tokodai 5-5, Tsukuba, Ibaraki 300-2635, Japan
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Ikeda Naoki
The Femtosecond Technology Research Association, Tokodai 5-5, Tsukuba, Ibaraki 300-2635, Japan
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Ohkouchi Shunsuke
The Femtosecond Technology Research Association, Tokodai 5-5, Tsukuba, Ibaraki 300-2635, Japan
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Sugimoto Yoshimasa
The Femtosecond Technology Research Association, Tokodai 5-5, Tsukuba, Ibaraki 300-2635, Japan
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Asakawa Kiyoshi
The Femtosecond Technology Research Association, Tokodai 5-5, Tsukuba, Ibaraki 300-2635, Japan
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NAKAMURA Hitoshi
The Femtosecond Technology Research Association
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- Two-Dimensional InGaAs Quantum-Dot Arrays with Periods of 70-100nm on Artificially Prepared Nanoholes
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- Two-Dimensional InGaAs Quantum-Dot Arrays with Periods of 70–100 nm on Artificially Prepared Nanoholes
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- Fabrication and Characterization of AlGaAs-based Photonic Crystal Slab Waveguides by Precisely Controlled Self-Aligned Selective-Oxidation Process
- Ultra-Small GaAs-Photonic-Crystal-Slab-Waveguide-Based Near-Infrared Components: Fabrication, Guided-Mode Identification, and Estimation of Low-Loss and Broad-Band-Width in Straight-Waveguides, 60°-Bends and Y-Splitters
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