Control of InAs Quantum Dot Emission Wavelengths in Narrow Regions by Selective Formation of GaInAs Covered Layers Grown with in situ Mask
スポンサーリンク
概要
- 論文の詳細を見る
We have succeeded in controlling the emission wavelength of a self-assembled InAs quantum dot (QD) structure in a narrow region. The emission wavelength of the QDs was varied locally by a covered GaInAs layer grown with an in situ mask, which can be fitted to the sample holder and removed in an ultra-high-vacuum environment. This mask enables the selective growth of high-quality self-assembled QDs with the desired emission wavelengths ranging from 1.23 μm to 1.32 μm. This technique has potential applications in the integration of microstructures with QDs into optoelectronic functional devices.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-07-15
著者
-
OHKOUCHI Shunsuke
The Femtosecond Technology Research Association (FESTA)
-
NAKAMURA Yusui
The Femtosecond Technology Research Association (FESTA)
-
NAKAMURA Hitoshi
The Femtosecond Technology Research Association (FESTA)
-
ASAKAWA Kiyoshi
The Femtosecond Technology Research Association (FESTA)
-
NAKAMURA Hitoshi
The Femtosecond Technology Research Association
関連論文
- Ultra-Small GaAs-Photonic-Crystal-Slab-Waveguide-Based Near-Infrared Components : Fabrication, Guided-Mode Identification, and Estimation of Low-Loss and Broad-Band-Width in Straight-Waveguides, 60°-Bends and Y-Splitters
- Fabrication and Characterization of AlGaAs-based Photonic Crystal Slab Waveguides by Precisely Controlled Self-Aligned Selective-Oxidation Process
- InAs Nano-Dot Array Formation Using Nano-Jet Probe for Photonics Applications
- Control of InAs Quantum Dot Emission Wavelengths in Narrow Regions by Selective Formation of GaInAs Covered Layers Growth with in situ Mask
- Wavelength-Dependent Coupling Characteristics in Two-Dimensional Photonic-Crystal Slab Directional Coupler
- Two-Dimensional InGaAs Quantum-Dot Arrays with Periods of 70-100nm on Artificially Prepared Nanoholes
- InAs-Dot/GaAs Structures Site-Controlled by in situ Electron-Beam Lithography and Self-Organizing Molecular Beam Epitaxy Growth
- Control of InAs Quantum Dot Emission Wavelengths in Narrow Regions by Selective Formation of GaInAs Covered Layers Grown with in situ Mask
- Two-Dimensional InGaAs Quantum-Dot Arrays with Periods of 70–100 nm on Artificially Prepared Nanoholes
- Ultra-Small Photonic-Crystal-Waveguide-Based Y-Splitters Useful in the Near-Infrared Wavelength Region
- Fabrication and Characterization of AlGaAs-based Photonic Crystal Slab Waveguides by Precisely Controlled Self-Aligned Selective-Oxidation Process
- Ultra-Small GaAs-Photonic-Crystal-Slab-Waveguide-Based Near-Infrared Components: Fabrication, Guided-Mode Identification, and Estimation of Low-Loss and Broad-Band-Width in Straight-Waveguides, 60°-Bends and Y-Splitters
- InAs Nano-Dot Array Formation Using Nano-Jet Probe for Photonics Applications