OHKOUCHI Shunsuke | The Femtosecond Technology Research Association (FESTA)
スポンサーリンク
概要
関連著者
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OHKOUCHI Shunsuke
The Femtosecond Technology Research Association (FESTA)
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NAKAMURA Yusui
The Femtosecond Technology Research Association (FESTA)
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NAKAMURA Hitoshi
The Femtosecond Technology Research Association (FESTA)
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ASAKAWA Kiyoshi
The Femtosecond Technology Research Association (FESTA)
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Asakawa K
Center For Tsukuba Advanced Research Alliance (tara) University Of Tsukuba
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NAKAMURA Hitoshi
The Femtosecond Technology Research Association
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SUGIMOTO Yoshimasa
The Femtosecond Technology Research Association
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IKEDA Naoki
The Femtosecond Technology Research Association
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Nakamura Yusui
The Femtosecond Technology Research Association, Tokodai 5-5, Tsukuba, Ibaraki 300-2635, Japan
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Ikeda Naoki
The Femtosecond Technology Research Association, Tokodai 5-5, Tsukuba, Ibaraki 300-2635, Japan
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Ohkouchi Shunsuke
The Femtosecond Technology Research Association (FESTA), 5-5 Tokodai, Tsukuba, Ibaraki 300-2635, Japan
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Ohkouchi Shunsuke
The Femtosecond Technology Research Association, Tokodai 5-5, Tsukuba, Ibaraki 300-2635, Japan
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Asakawa Kiyoshi
The Femtosecond Technology Research Association (FESTA), 5-5 Tokodai, Tsukuba, Ibaraki 300-2635, Japan
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Sugimoto Yoshimasa
The Femtosecond Technology Research Association, Tokodai 5-5, Tsukuba, Ibaraki 300-2635, Japan
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Asakawa Kiyoshi
The Femtosecond Technology Research Association, Tokodai 5-5, Tsukuba, Ibaraki 300-2635, Japan
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Nakamura Hitoshi
The Femtosecond Technology Research Association (FESTA), 5-5 Tokodai, Tsukuba, Ibaraki 300-2635, Japan
著作論文
- InAs Nano-Dot Array Formation Using Nano-Jet Probe for Photonics Applications
- Control of InAs Quantum Dot Emission Wavelengths in Narrow Regions by Selective Formation of GaInAs Covered Layers Growth with in situ Mask
- Two-Dimensional InGaAs Quantum-Dot Arrays with Periods of 70-100nm on Artificially Prepared Nanoholes
- Control of InAs Quantum Dot Emission Wavelengths in Narrow Regions by Selective Formation of GaInAs Covered Layers Grown with in situ Mask
- Two-Dimensional InGaAs Quantum-Dot Arrays with Periods of 70–100 nm on Artificially Prepared Nanoholes
- InAs Nano-Dot Array Formation Using Nano-Jet Probe for Photonics Applications