Highty Transparent Chemically Amplified ArF Excimer Laser Resists by Absorption Band Shift for 193 nm Wavelength
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-12-30
著者
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Asakawa K
Toshiba Corp. Kawasaki Jpn
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USHIROGOUCHI Tohru
Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation
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ASAKAWA Koji
Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation
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SHIDA Naomi
Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation
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NAKASE Makoto
Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation
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NAITO Takuya
Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation
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Shida N
Toshiba Corp. Kawasaki Jpn
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Naito Takuya
Materials And Devices Research Laboratories Research And Development Center Toshiba Corporation
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Asakawa K
Center For Tsukuba Advanced Research Alliance (tara) University Of Tsukuba
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Ushirogouchi T
Toshiba Corp. Kawasaki Jpn
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Nakase M
Materials And Devices Research Laboratories Research And Development Center Toshiba Corporation
関連論文
- Advanced Materials for l93-nm Resists
- Dissolution Inhibitors for 193-nm Chemically Amplified Resists
- Highty Transparent Chemically Amplified ArF Excimer Laser Resists by Absorption Band Shift for 193 nm Wavelength
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