Recent Progress in KrF Excimer Laser Lithography (Special Issue on Opto-Electronics and LSI)

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概要

• 論文の詳細を見る

• Reduction in the illumination wavelength for exposure leads to higher resolution while keeping the depth of focus. Thus, KrF excimer laser lithography has been positioned as the next generation lithography tool behind g / i-line optical lithography, and many studies have been investigated. In the early days, the excimer laser lithography had many inherent problems, such as inadequate reliability, difficult maintainability, high operating cost, and low resolution and sensitivity of resist materials. However, the performance of the excimer laser stepper has been improved and chemical amplification resists have been developed for the past decade. At present, KrF excimer lithography has reached the level of trial manufacturing of lower submicron ULSI devices beyond 64 Mbit DRAMs.

• 社団法人電子情報通信学会の論文
• 1993-01-25

著者

• NAKASE Makoto

  Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation

• Nakase M

  Materials And Devices Research Laboratories Research And Development Center Toshiba Corporation

• Nakase Makoto

  Research Center Toshiba Corporation

関連論文

• Dissolution Inhibitors for 193-nm Chemically Amplified Resists
• Highty Transparent Chemically Amplified ArF Excimer Laser Resists by Absorption Band Shift for 193 nm Wavelength
• Thermal Decomposition of Dissolution Inhibitor in Chemically Amplified Resist during Prebake Process
• Simulation Study on Phase-Shifting Masks for Isolated Patterns : Photolithography
• Simulation Study on Phase-Shifting Masks for Isolated Patterns
• Optimization of a High-Performance Chemically Amplified Positive Resist for Electron-Beam Lithography
• Effect of Coherence Factor σ and Shifter Arrangement for the Levenson-Type Phase-Shifting Mask
• Recent Progress in KrF Excimer Laser Lithography (Special Issue on Opto-Electronics and LSI)

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