Charge Disproportionation in Highly One-Dimensional Molecular Conductor TPP[Co(Pc)(CN)_2]_2(Condensed matter: electronic structure and electrical, magnetic, and optical properties)

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概要

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• We investigated the ground state of a highly one-dimensional conductor, TPP[Co(Pc)(CN)_2]_2 (TPP=tetraphenylphosphonium and PC=phthalocyanine), by the measurement of the X-ray diffraction, electron spin resonance, nuclear quadrupole resonance, and magnetoresistance. An increase of the magnetic fluctuations was observed below 20 K, where no structural deformation was detected. In the ^<59>Co nuclear quadrupole resonance, we found an asymmetric broadening of the spectra owing to the intrinsic inhomogeneity of the molecular charge. We propose that the ground state is characterized by a weak charge disproportionation with antiferromagnetic fluctuations due to the high one dimensionality. A large magnetoresistance was observed under a high magnetic field. Spin effects are dominant at low fields. The anisotropic magnetoresistance suggests a change in the ground-state nature above 10 T.

• 社団法人日本物理学会の論文
• 2006-10-15

著者

• Naito Tomoyuki

  Department Of Materials Science And Technology Faculty Of Engineering Iwate University

• Maple M

  Univ. California California Usa

• Maeda M

  Department Of Engineering Physics Electronics And Mechanics Graduate School Of Engineering Nagoya In

• Inabe T

  Division Of Chemistry Hokkaido University

• HANASAKI N.

  Department of Physics, Okayama University

• MASUDA K.

  Institute for Solid State Physics, University of Tokyo

• KODAMA K.

  Institute for Solid State Physics, University of Tokyo

• MATSUDA M.

  Institute for Solid State Physics, University of Tokyo

• TAJIMA H.

  Institute for Solid State Physics, University of Tokyo

• YAMAZAKI J.

  Institute for Solid State Physics, University of Tokyo

• TAKIGAWA M.

  Institute for Solid State Physics, University of Tokyo

• YAMAURA J.

  Institute for Solid State Physics, University of Tokyo

• OHMICHI E.

  Institute for Solid State Physics, University of Tokyo

• OSADA T.

  Institute for Solid State Physics, University of Tokyo

• NAITO T.

  Division of Chemistry, Graduate School of Science, Hokkaido University

• INABE T.

  Division of Chemistry, Graduate School of Science, Hokkaido University

• HANASAKI N.

  (Present address) Department of Applied, University of Tokyo

• Matsuda Masaaki

  Department Of Physics Tohoku University

• Matsuda M

  Institute For Solid State Physics University Of Tokyo

• Maeda Masaki

  Department Of Engineering Physics Electronics And Mechanics Graduate School Of Engineering Nagoya In

• Naito T

  Hitachi Ltd. Ibaraki Jpn

• Hanasaki N.

  (present Address) Department Of Applied University Of Tokyo

• Naito T

  Division Of Chemistry Hokkaido University

• Nakasugi Tetsuro

  Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corp.

• Ohmichi E.

  Institute For Solid State Physics University Of Tokyo

• Osada T.

  Institute For Solid State Physics University Of Tokyo

• Takigawa M.

  Institute For Solid State Physics University Of Tokyo

• Nakasugi T

  Microelectronics Engineering Labs. Toshiba Corporation

• Hanasaki N.

  Department of Physics, Okayama University:Institute for Solid State Physics, University of Tokyo

• Hanasaki N.

  Department of Basic Science, Graduate School of Arts and Sciences, University of Tokyo

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