Thermal Relaxation Phenomena in the Formation of Device-Quality SiO_2/Si Interfaces
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-12-30
著者
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Kurz H
Rwth Aachen Aachen Deu
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Yasuda T
Joint Research Center For Atom Technology (jrcat)
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Yasuda Tetsuji
Joint Research Center For Atom Technology(jrcat):national Institute For Advanced Interdisciplinary R
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Kurz H
Rheinisch‐westfaeilsche Technische Hochsch. Aachen Deu
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Yasuda T.
Department of Exercise and Sport Science, Tokyo Metropolitan University
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Yasuda T
Joint Research Center For Atom Technology(jrcat):national Institute For Advanced Interdisciplinary R
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Bjorkman C.
Research Center For Integrated Systems Hiroshima University
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LUCOVSKY G.
Departments of Physics, Materials Science & Engineering, and Electrical & Computer Engineering, Nort
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BJORKMAN C.
Departments of Physics, Materials Science & Engineering, and Electrical & Computer Engineering, Nort
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EMMERICHS U.
Institute of Semiconductor Electronics II
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MEYER C.
Institute of Semiconductor Electronics II
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LEO K.
Institute of Semiconductor Electronics II
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KURZ H.
Institute of Semiconductor Electronics II
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Lucovsky G
Departments Of Physics And Electrical And Computer Engineering North Carolina State University
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Lucovsky G.
Department Of Physics North Carolina State University:materials Science And Engineering North Caroli
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Bjorkman C.
Departments Of Physics Materials Science & Engineering And Electrical & Computer Engineering
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Leo K
Technische Univ. Dresden Dresden Deu
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