Device-Quality SiO_2/Si(100) Interfaces Prepared by a Two-Step Remote Plasma-Assisted Oxidation-Depositon Process

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概要

• 論文の詳細を見る

• When using conventional high-temperature thermal oxidation processes to fabricate Si-based devices that include SiO_2 dielectrics, the SiO_2/Si interface and bulk-oxide layer are formed at the same time. We have developed a new low-temperature process that separates interface formation, by plasma-assisted oxidation, from bulk-oxide deposition, by plasmaassisted chemical-vapor deposition (CVD) and thereby separately controls, and optimizes the respective electrical properties of the SiO_2/Si interface, and the SiO_2 layer. This approach has been extended to multilayer oxide-nitride-oxide (ONO) dielectrics on Si substrates, and has also been successfully transferred to an integrated processing cluster too that combines the new SiO_2/Si oxidation/deposition process, with deposition of polycrystalline Si gate electrodes by a hightemperature, rapid thermal CVD process to form a stacked gate structure.

• 社団法人応用物理学会の論文
• 1992-12-30

著者

• Ma Yi

  Department Of Physics North Carolina State University

• Yasuda T.

  Department of Exercise and Sport Science, Tokyo Metropolitan University

• LUCOVSKY G.

  Departments of Physics, Materials Science & Engineering, and Electrical & Computer Engineering, Nort

• Lucovsky G.

  Department Of Physics North Carolina State University:materials Science And Engineering North Caroli

• SILVERSTRE C.

  Electrical and Computer Engineering, North Carolina State University

• HAUSER J.

  Electrical and Computer Engineering, North Carolina State University

• Silverstre C.

  Electrical And Computer Engineering North Carolina State University

• Hauser J.

  Electrical And Computer Engineering North Carolina State University

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