Hot-Carrier Detrapping Mechanisms in MOS Devices (SOLID STATE DEVICES AND MATERIALS 1)
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概要
- 論文の詳細を見る
Detrapping phenomena in stressed MOS devices are observed by monitoring electrical characteristics after a constant current stress is applied. The "see-saw" behavior of the density of interface states and the subsequent partial recovery of the threshold voltage give evidence that detrapping occurs in the capacitor and transistor. Threshold voltage reversal has two components, thermal recovery (TR) and field-assisted-recovery (FAR). These results suggest the occurrence of a degradation reversal which could be of importance in future device design.
- 社団法人応用物理学会の論文
- 1989-11-20
著者
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Takeda Eiji
Central Research Laboratory Hitachi Lid.
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Hamada Akemi
Central Research Laboratory Hitachi Ltd.
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PAGADUAN F.
Central Research Laboratory, Hitachi Ltd.
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YANG C.
Central Research Laboratory, Hitachi Ltd.
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Takeda Eiji
Central Research Laboratory
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Pagaduan F.
Central Research Laboratory Hitachi Ltd.:microelectronics Laboratory Santa Clara University
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Yang C.
Central Research Laboratory Hitachi Ltd.:microelectronics Laboratory Santa Clara University
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