High Packing Density, high Speed CMOS (Hi-CMOS) Device technology : A-3: MOS DEVICE AND LIST (3)

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1979-03-01

著者

• HASHIMOTO Norikazu

  Central Research Laboratory, HITACHI Ltd.

• Sakai Yoshio

  Central Research Laboratory Hitachi Ltd.

• MINATO Osamu

  Central Research Laboratory, Hitachi, Ltd.

• MASUHARA Toshiaki

  Central Research Laboratory, Hitachi, Ltd.

• Minato Osamu

  Central Research Laboratory Hitachi Ltd.

• Masuhara Toshiaki

  Central Research Laboratory Hitachi Ltd.

• Hashimoto Norikazu

  Central Clinical Laboratory Fukui Medical University

関連論文

• Measurements of Compositional Change in Semi-Insulating GaAs Single Crystals by Precise Lattice Parameter Measurements
• Short Channel MOS FET's Fabricated by Self-Aligned Ion Implantation and Laser Annealing : A-3: LASER ANNEALING/SOS DEVICES
• Buried J-FET Powered Static RAM Cell : A-5: MEMORY DEVICES
• High Packing Density, high Speed CMOS (Hi-CMOS) Device technology : A-3: MOS DEVICE AND LIST (3)
• Novel High Density, Stacked Capacitor MOS RAM : A-1: MOS DEVICE AND LIST (1)
• Serum Levels of Soluble Interleukin-2 Receptor in Patients with Various Renal Diseases
• Short Channel MOS-IC Based on Accurate Two Dimensional Device Design : A-6: MOS FIELD EFFECT TRANSISTORS
• Plasma Etching Monitor by Electric Probe : A-5: DEVICE TECHNOLOGY (2)

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