Buried J-FET Powered Static RAM Cell : A-5: MEMORY DEVICES
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1980-04-30
著者
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Sakai Yoshio
Central Research Laboratory Hitachi Ltd.
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MINATO Osamu
Central Research Laboratory, Hitachi, Ltd.
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MASUHARA Toshiaki
Central Research Laboratory, Hitachi, Ltd.
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SASAKI Toshio
Central Research Laboratory, Hitachi, Ltd.
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Minato Osamu
Central Research Laboratory Hitachi Ltd.
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Masuhara Toshiaki
Central Research Laboratory Hitachi Ltd.
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Sasaki Toshio
Central Research Laboratory Hitachi Ltd.
関連論文
- Buried J-FET Powered Static RAM Cell : A-5: MEMORY DEVICES
- High Packing Density, high Speed CMOS (Hi-CMOS) Device technology : A-3: MOS DEVICE AND LIST (3)
- Short Channel MOS-IC Based on Accurate Two Dimensional Device Design : A-6: MOS FIELD EFFECT TRANSISTORS