Thermal Warping of Large Diameter Czochralski-Grown Silicon Wafers : Semiconductors and Semiconductor Devices
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概要
- 論文の詳細を見る
Thermal warping of large diameter Czochralski-grown silicon wafers as affected by oxygen precipitation is investigated both experimentally and theoretically. The difference of wafer warpage and its shape between the heating and cooling processes is clarified by thermal stresses calculated from temperature gradients in wafers for each process. The critical temperatures for the slip occurrence are determined for the heating and cooling processes as a function of the microdefect density. Then the optimized process conditions to avoid slip dislocations are obtained experimentally. The critical stress curve for the processed wafers in MOS devices is determined by comparison with the thermal stress curves calculated under various process conditions, and thereby predicting the slip-free conditions for wafers in a row with various diameters from 100 to 200mm.
- 社団法人応用物理学会の論文
- 1988-12-20
著者
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SHIMIZU Hirofumi
Kofu Branch, Musashi Works, Hitachi Ltd.,
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AOSHIMA Takaaki
Musashi Works of Hitachi Ltd.
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Aoshima T
Musashi Works Of Hitachi Ltd.
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Shimizu Hirofumi
Kofu Branch Musashi Works Of Hitachi Ltd
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Shimizu Hirofumi
Kofu Branch Musashi Works Of Hitachi Ltd.
関連論文
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- Nondestructive Observations of Surface Flaws and Contaminations in Silicon Wafers by Means of a Scanning Photon Microscope : Semiconductors and Semiconductor Devices
- Calibration of Minority Carrier Lifetimes Measured with an ac Photovoltaic Method : Techniques, Instrumentations and Measurement
- Dependence of Warpage of Czochralski-Grown Silicon Wafers on Oxygen Concentration and Its Application to MOS Image-Sensor Device
- A Defect Control Technique for the Intrinsic Gettering in Silicon Device Processing
- Thermal Warping of Large Diameter Czochralski-Grown Silicon Wafers : Semiconductors and Semiconductor Devices
- Warpage of Czochralski-Grown Silicon Wafers as Affected by Oxygen Precipitation
- Effects of Dipping in an Aqueous Hydrofluoric Acid Solution before Oxidation on Minority Carrier Lifetimes in p-Type Silicon Wafers