Warpage of Czochralski-Grown Silicon Wafers as Affected by Oxygen Precipitation

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概要

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• The warpage of Czochralski-grown silicon wafers was investigated in relation to oxygen precipitation caused by simulated heat-treatments at l000℃ and LSI processing, using specimens cut from measured positions along the crystal length. The warpage of the wafers due to simulated thermal stresses increases with the concentration of precipitated oxygen atoms associated with the formation of SiO_2 precipitates observed in infrared spectra at around 1224cm^<-1>, reaching a maximum in the seed-end and a minimum in the tail-end wafers. LSI processing experiments showed that the microdefect density resulting from the nuclei in as-grown ingots must be equal to or lower than 5×10^9cm^<-3> to reduce the warpage and improve the chip yield of devices, even if the microdefect density in the bulk is increased to aim at the intrinsic gettering effect.

• 社団法人応用物理学会の論文
• 1985-07-20

著者

• Shimizu Hirofumi

  Kofu Branch Musashi Works Of Hitachi Ltd

• WATANABE Tetsuo

  Device Development Center, Hitachi Ltd.

• KAKUI Yoshiharu

  Musashi Works of Hitachi Ltd.

• Watanabe Tetsuo

  Device Development Center Hitachi Ltd.

関連論文

• Comparison of Minority Carrier Lifetimes Measured by Photoconductive Decay and ac Photovoltaic Method : Techniques, Instrumentations and Measurement
• Nondestructive Observations of Surface Flaws and Contaminations in Silicon Wafers by Means of a Scanning Photon Microscope : Semiconductors and Semiconductor Devices
• Calibration of Minority Carrier Lifetimes Measured with an ac Photovoltaic Method : Techniques, Instrumentations and Measurement
• Dependence of Warpage of Czochralski-Grown Silicon Wafers on Oxygen Concentration and Its Application to MOS Image-Sensor Device
• Thermal Warping of Large Diameter Czochralski-Grown Silicon Wafers : Semiconductors and Semiconductor Devices
• Warpage of Czochralski-Grown Silicon Wafers as Affected by Oxygen Precipitation
• Effects of Dipping in an Aqueous Hydrofluoric Acid Solution before Oxidation on Minority Carrier Lifetimes in p-Type Silicon Wafers

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