Effect of Ozone Annealing on the Charge Trapping Property of Ta_2O_5-Si_3N_4-p-Si Capacitor Grown by Low-pressure Chemical Vapor Deposition

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-12-15

著者

• Kato H

  Photon Factory High Energy Accelerator Research Organization

• Kato Hiroo

  Institute Of Material Structure Science High Energy Accelerator Research Organization

• Kato H

  Saitama University

• Kato Hiromichi

  Department Of Materials Science And Engineering Nagoya Institute Of Technology

• Kato Hisayuki

  Semiconductor Design & Development Center Hitachi Ltd.

• Toyoda Takehiko

  Department Of Electrical Electronics And Computer Engineering Waseda University

• OHKI Yoshimichi

  Department of Electrical Engineering, School of Science and Engineering, Waseda University

• FUJIMAKI Makoto

  Department of Electrical, Electronics, and Computer Engineering, Waseda University

• Kato H

  Department Of Mechanical And Intelligent Engineering Graduate School Of Engineering Utsunomiya Unive

• Kato Hiromitsu

  Department Of Electrical Engineering And Bioscience Waseda University

• SEOL Kwang

  RIKEN(The Institute of Physical and Chemical Research)

• FUJIMAKI Makoto

  Optical Radiation Section, Electrotechnical Laboratory

• TAKIYAMA Makoto

  NSC Electron Corporation

• Seol Kwang

  Riken

• Seol K

  Riken Saitama Jpn

• Ohki Yoshimichi

  Department Of Electrical Electronics And Computer Engineering Waseda University

• Ohki Yoshimichi

  Department Of Electrical Electronic And Computer Engineering Waseda University

• Fujimaki M

  Optical Radiation Section Electrotechnical Laboratory

• Fujimaki Makoto

  Department Of Electrical Electronics And Computer Engineering Waseda University

• OHKI Yoshimichi

  Department of Electrical, Electronics, and Computer Engineering, Waseda University

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