Saito Eiji | Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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概要
- Saito Eijiの詳細を見る
- 同名の論文著者
- Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japanの論文著者
関連著者
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Saito Eiji
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Suemitsu Maki
Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japan
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Fukidome Hirokazu
Research Center For Photoenergetics Of Organic Materials Osaka University
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Handa Hiroyuki
Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japan
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Suemitsu Maki
Research Institute Of Electrical Communication Tohoku University
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Imaizumi Kei
Research Institute Of Electrical Communications Tohoku University
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Handa Hiroyuki
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Takahashi Ryota
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Imaizumi Kei
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Teraoka Yuden
Japan Atomic Energy Agency
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YOSHIGOE Akitaka
Japan Atomic Energy Agency
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Ito Shun
Institute For Materials Research Tohoku University
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Takahashi Ryota
Research Institute Of Electrical Communications Tohoku University
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Saito Eiji
Research Institute Of Electrical Communications Tohoku University
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Abe Shunsuke
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Teraoka Yuden
Synchrotron Radiation Research Center Japan Atomic Energy Agency
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Enta Yoshiharu
Faculty Of Science And Technology Hirosaki University
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Handa Hiroyuki
Research Institute Of Electrical Communications Tohoku University
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ABE Shunsuke
Research Institute of Electrical Communications, Tohoku University
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INOMATA Syuya
Research Institute of Electrical Communications, Tohoku University
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SAITO Eiji
Research Institute of Electrical Communications, Tohoku University
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ENTA Yoshiharu
Graduate School of Science and Technology, Hirosaki University
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KOTSUGI Masato
CREST, Japan Science and Technology Agency
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OHKOUCHI Takuo
JASRI/SPring-8
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KINOSHITA Toyohiko
CREST, Japan Science and Technology Agency
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Inomata Syuya
Research Institute Of Electrical Communications Tohoku University
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Ito Shun
Institute Of Materials Research Tohoku University
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Suemitsu Maki
Research Institute Of Electrical Communications Tohoku University
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Kinoshita Toyohiko
Crest Japan Science And Technology Agency
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Enta Yoshiharu
Graduate School Of Science And Technology Hirosaki University
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Kotsugi Masato
Crest Japan Science And Technology Agency
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Abe Shunsuke
Research Institute Of Electrical Communications Tohoku University
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Miyamoto Yu
Research Institute of Electrical Communications, Tohoku University, Sendai 980-8577, Japan
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Suemitsu Maki
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Jung Myung-Ho
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Filimonov Sergey
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Saito Eiji
Research Institute of Electrical Communications, Tohoku University, Sendai 980-8577, Japan
著作論文
- Transmission Electron Microscopy and Raman-Scattering Spectroscopy Observation on the Interface Structure of Graphene Formed on Si Substrates with Various Orientations
- Growth Rate Anomaly in Ultralow-Pressure Chemical Vapor Deposition of 3C-SiC on Si(001) Using Monomethylsilane
- Oxygen-induced reduction of the graphitization temperature of SiC surface (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
- Epitaxial Growth Processes of Graphene on Silicon Substrates
- Controls over Structural and Electronic Properties of Epitaxial Graphene on Silicon Using Surface Termination of 3C-SiC(111)/Si