Proposal of Monochromatic Electron Beam Source Using Resonant Tunneling Effect
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概要
- 論文の詳細を見る
We propose a new type of monochromatic electron beam source that incorporates the resonant tunneling effect for ultrahigh-resolution electron microscopes. One set of barrier and quantum well layers on a very sharp GaAs tip surface and a triangular vacuum level barrier created by applying a negative voltage to the sharp tip form a double-barrier structure which enables the resonant tunneling effect to occur. Computer simulations indicated large peaks of electron transmittance through the vacuum/GaAs/AlAs/GaAs double-barrier system. A monochromatic electron beam of about 30 meV in full width at half-maximum is expected at room temperature.
- 社団法人応用物理学会の論文
- 1995-10-15
著者
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Kuroda Katsuhiro
Central Research Laboratory Hitachi Ltd.
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OHSHIMA Takashi
Central Research Laboratory, Hitachi, Ltd.
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Okamoto Masakuni
Central Research Laboratory Hitachi Ltd.
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Ohshima Takashi
Central Research Laboratory Hitachi Ltd.
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