MOTOHISA Junichi | Research Center for Interface Quantum Electronics and Faculty of Engineering, Hokkaido University

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概要

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著作論文

Quantum Well Wire Fabrication Method Using Self-Organized Multiatomic Steps on Vicinal (001) GaAs Surfaces by Metalorganic Vapor Phase Epitaxy
Novel Formation Method of Quantum Dot Structures by Self-Limited Selective Area Metalorganic Vapor Phase Epitaxy
Fabrication of GaAs/AlGaAs Quantum Dots by Metalorganic Vapor Phase Epitaxy on Patterned GaAs Substrates
Photonic Crystal Slabs with Hexagonal Optical Atoms and Their Application in Waveguides
III-V semiconductor hetero-structure nanowires by selective area MOVPE
GaAs DH-HEMT channel coupled InAs quantum dot memory device by selective area metal organic vapor phase epitaxy
MOVPE Condition Dependences of MnAs Nanoclusters Grown on GaInAs (111)A Surfaces
Formation of InAs Dots on AlGaAs Ridge Wire Structures by Selective Area MOVPE Growth
Formation of InAs Dots on AlGaAs Ridge Wires Structure by Selective Area MOVPE Growth
Initial Stage of InGaAs Growth on GaAs Multiatomic Steps by MOVPE
Temperature Dependence of Si Delta-Doping on GaAs Singular and Vicinal Surfaces in Metalorganic Vapor Phase Epitaxy
Characterization of Potential Modulation in Novel Lateral Surface Superlattices Formed on GaAs Multiatomic Steps
Real-Time Observation of Electron-Beam Induced Mass Transport in Strained InGaAs/AlGaAs Layers on GaAs (100) and (311)B Substrates
Characterization of Potential Modulation in Novel Lateral Surface Superlattices Formed on GaAs Multiatomic Steps
Delta-Doping and the Possibility of Wire-like Incorporation of Si on GaAs Vicinal Surfaces in Metalorganic Vapor Phase Epitaxial Growth
Delta-Doping of Si on GaAs Vicinal Surfaces and Its Possibility of Wirelike Incorporation in Metalorganic Vapor Phase Epitaxial Growth
A Novel Electron Wave Interference Device Using Multiatomic Steps on Vicinal GaAs Surfaces Grown by Metalorganic Vapor Phase Epitaxy: Investigation of Transport Properties
A Novel Electron Wave Interference Device Using Multiatomic Steps on Vicinal GaAs Surfaces Grown by MOVPE : Investigation of Transport Properties
Theoretical study on the photonic crystal slabs with hexagonal optical atoms

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