Selective-Area Growth of InAs Nanowires with Metal/Dielectric Composite Mask and Their Application to Vertical Surrounding-Gate Field-Effect Transistors
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概要
- 論文の詳細を見る
We attempted the selective-area metalorganic vapor-phase epitaxial (SA-MOVPE) growth of InAs nanowires (NWs) using a tungsten/dielectric composite mask and fabricated nanowire vertical surrounding-gate field-effect transistors (NW-VSG-FETs), where tungsten served as both the mask in SA-MOVPE growth and the bottom electrode of the FET. The growth of NWs with diameters as low as 100 nm was demonstrated using the composite mask. The fabricated NW-VSG-FET exhibited improved drain current density as compared with our previously reported NW-VSG-FETs, and a larger on/off ratio as compared with previously reported NW-VSG-FETs having similar electrodes at the bottoms of NWs.
- The Japan Society of Applied Physicsの論文
- 2013-04-25
著者
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Motohisa Junichi
Graduate School Of Information Science And Technology And Research Center For Integrated Quantum Ele
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HARA Shinjiro
Graduate School of Information Science and Technology and Research Center for Integrated Quantum Ele
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Kobayashi Yuta
Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814, Japan
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Kohashi Yoshinori
Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814, Japan
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KOBAYASHI Yuta
Graduate School of Information Science and Technology, Hokkaido University
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KOHASHI Yoshinori
Graduate School of Information Science and Technology, Hokkaido University
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- Selective-Area Growth of InAs Nanowires with Metal/Dielectric Composite Mask and Their Application to Vertical Surrounding-Gate Field-Effect Transistors
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- Selective-Area Growth of InAs Nanowires with Metal/Dieiectric Composite Mask and Their Application to Vertical Surrounding-Gate Field-Effect Transistors