Selective-Area Growth of InAs Nanowires with Metal/Dieiectric Composite Mask and Their Application to Vertical Surrounding-Gate Field-Effect Transistors
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概要
- 論文の詳細を見る
- 2013-04-25
著者
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Motohisa Junichi
Graduate School Of Information Science And Technology And Research Center For Integrated Quantum Ele
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HARA Shinjiro
Graduate School of Information Science and Technology and Research Center for Integrated Quantum Ele
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KOBAYASHI Yuta
Graduate School of Information Science and Technology, Hokkaido University
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KOHASHI Yoshinori
Graduate School of Information Science and Technology, Hokkaido University
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HARA Shinjiro
Graduate School of Information Science and Technology, Hokkaido University
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- Selective-Area Growth of InAs Nanowires with Metal/Dielectric Composite Mask and Their Application to Vertical Surrounding-Gate Field-Effect Transistors
- Selective-Area Growth of InAs Nanowires with Metal/Dielectric Composite Mask and Their Application to Vertical Surrounding-Gate Field-Effect Transistors
- Pitch-Independent Realization of 30-nm-Diameter InGaAs Nanowire Arrays by Two-Step Growth Method in Selective-Area Metalorganic Vapor-Phase Epitaxy
- Selective-Area Growth of InAs Nanowires with Metal/Dieiectric Composite Mask and Their Application to Vertical Surrounding-Gate Field-Effect Transistors