Metal–Organic Vapor Phase Epitaxial Growth Condition Dependences of MnAs Nanocluster Formation on GaInAs (111)A Surfaces
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概要
- 論文の詳細を見る
The authors report that the formation of MnAs nanoclusters (NCs) on GaInAs (111)A surfaces strongly depends on metal–organic vapor phase epitaxial growth conditions. It was confirmed from the atomic force microscope observation that deep holes were formed on the surfaces under low V/Mn ratio and high growth temperature conditions, in addition to the formation of MnAs NCs. From the results of cross-sectional transmission electron microscope observation, these deep holes were formed on the underlying GaInAs layers, and MnAs NCs were embedded in the GaInAs (111)A layers. The formation of these embedded MnAs NCs was possibly caused by the phenomenon of "endotaxy". From the experimental results of thermal treatments of the samples, it was revealed that the deep holes were formed on the GaInAs (111)A surfaces even after the thermal annealing in the atmosphere of Mn source gas and hydrogen. Therefore, we concluded that high AsH3 partial pressure (V/Mn ratio) conditions were required for the MnAs growth on GaInAs (111)A surfaces.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-04-25
著者
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Motohisa Junichi
Graduate School Of Information Science And Technology And Research Center For Integrated Quantum Ele
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FUKUI Takashi
Graduate School of Information Science and Technology and Research Center for Integrated Quantum Ele
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Hara Shinjiroh
Graduate School Of Information Science And Technology And Research Center For Integrated Quantum Ele
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Iguchi Hiroko
Graduate School of Information Science and Technology, Hokkaido University, North 14 West 9, Sapporo 060-0814, Japan
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Motohisa Junichi
Graduate School of Information Science and Technology, Hokkaido University, North 14 West 9, Sapporo 060-0814, Japan
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Fukui Takashi
Graduate School of Information Science and Technology, Hokkaido University, North 14 West 9, Sapporo 060-0814, Japan
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Hara Shinjiroh
Graduate School of Information Science and Technology, Hokkaido University, North 14 West 9, Sapporo 060-0814, Japan
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