Refractive Index of Ga_<1-x>In_xAs Prepared by Vapor-Phase Epitaxy
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概要
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The refractive index has been determined from a reflectance measurement between photon energies of 0.5 and 1.4 eV at room temperature for Ga_<1-x>In_xAs samples with x<0.5 prepared by vapor-phase epitaxy. Dispersion characteristics of the refractive index below the bandgap is analyzed on the basis of a single-oscillator model with two parameters, E_0 and E_d. It seems that both E_0 and E_d vary linearly with x between GaAs and InAs.
- 社団法人応用物理学会の論文
- 1978-10-05
著者
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Takagi Toshio
Faculty Of Science And Technology Keio University
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Takagi Toru
Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation
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