Performance of a-Si:H Thin Film Transistors Fabricated by Very High Frequency Discharge Silane Plasma Chemical Vapor Deposition

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1997-10-15

著者

• KANEKO Setsuo

  Functional Devices Research Laboratories, NEC Corporation

• Takagi Toshio

  Faculty Of Science And Technology Keio University

• Takechi Kimihiro

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Ehime University

• Takagi T

  Faculty Of Science And Technology Keio University

• Kaneko Setsuo

  Functional Devices And Material Research Nec Corporation

• Takechi K

  Functional Devices Research Laboratories Nec Corporation

• TAKECHI Kazushige

  Functional Devices Research Laboratories, NEC Corporation

• TAKAGI Tomoko

  Research and Development Division, ANELVA Corporation

• Kaneko S

  Functional Devices Research Laboratories Nec Corporation

• Takechi Kazushige

  Functional Devices Research Laboratories Nec Corp

• Takagi Toru

  Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation

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• Performance of a-Si:H Thin Film Transistors Fabricated by Very High Frequency Discharge Silane Plasma Chemical Vapor Deposition

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