Electrical Instability of Hydrogenated Amorphous Silicon Thin-Film Transistors for Active-Matrix Liquid-Crystal Displays

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概要

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• We investigated the threshold voltage shifts (ΔV_T) of inverted-staggered hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) induced by steady-state (dc) and pulsed (ac) gate bias-temperature-stress (BTS) conditions. Our study showed that, for an equivalent effective-stress-time, ΔV_T has an apparent pulse-width dependence under negative BTS conditions-the narrower the pulse width, the smaller the ΔV_T. This gate-bias pulse-width dependence is explained by an effective-carrier-concentration model, which relates ΔV_T for negative pulsed gate-bias stress to the concentration of mobile carriers accumulated in the conduction channel along the a-Si:H/gate insulator interface. In addition, our investigation of the methodology of a-Si:H TFT electrical reliability evaluation indicates that, instead of steady-state BTS, pulsed BTS should be used to build the database needed to extrapolate ΔV_T induced by a long-term display operation. Using these experimental results, we have shown that a-Si:H TFTs have a satisfactory electrical reliability for a long-term active-matrix liquid-crystal display (AMLCD) operation.

• 社団法人応用物理学会の論文
• 1998-09-15

著者

• Chiang Chun-sung

  Department Of Electrical Engineering And Computer Science Center For Display Technology And Manufact

• Kanicki Jerzy

  Department Of Electrical Engineering And Computer Science Center For Display Technology And Manufact

• Takechi Kazushige

  Functional Devices Research Laboratories Nec Corp

関連論文

• The Mechanism at Work in 40 MHz Discharge SiH_4/NH_3/N_2 Plasma Chemical Vapor Deposition of SIN_x Films at Very High Rates
• Performance of a-Si:H Thin Film Transistors Fabricated by Very High Frequency Discharge Silane Plasma Chemical Vapor Deposition
• High-Mobility and High-Stability a-Si:H Thin Film Transistors with Smooth SiN_x/a-Si Interface
• Electrical Instability of Hydrogenated Amorphous Silicon Thin-Film Transistors for Active-Matrix Liquid-Crystal Displays
• Performance of a-Si:H Thin Film Transistors Fabricated by Very High Frequency Discharge Silane Plasma Chemical Vapor Deposition

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