Takechi Kazushige | Functional Devices Research Laboratories Nec Corp
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概要
関連著者
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Takechi Kazushige
Functional Devices Research Laboratories Nec Corp
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Kaneko Setsuo
Functional Devices And Material Research Nec Corporation
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KANEKO Setsuo
Functional Devices Research Laboratories, NEC Corporation
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TAKECHI Kazushige
Functional Devices Research Laboratories, NEC Corporation
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TAKAGI Tomoko
Research and Development Division, ANELVA Corporation
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Kaneko S
Functional Devices Research Laboratories Nec Corporation
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Takagi Toshio
Faculty Of Science And Technology Keio University
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Takechi Kimihiro
Department Of Electrical And Electronic Engineering Faculty Of Engineering Ehime University
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Takagi T
Faculty Of Science And Technology Keio University
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Takechi K
Functional Devices Research Laboratories Nec Corporation
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Takagi Toru
Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation
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Chiang Chun-sung
Department Of Electrical Engineering And Computer Science Center For Display Technology And Manufact
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Kanicki Jerzy
Department Of Electrical Engineering And Computer Science Center For Display Technology And Manufact
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NISHIDA Shinichi
Functional Devices Research Laboratories, NEC Corporation
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UCHIDA Hiroyuki
Functional Devices Research Laboratories, NEC Corporation
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Nishida Shinichi
Functional Devices Research Laboratories Nec Corporation
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Takechi Kazushige
Functional Devices Research Laboratories Nec Corporation
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Uchida Hiroyuki
Functional Devices Research Laboratories Nec Corporation
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Takechi Kazushige
Functional Devices Research Laboratories, NEC Corporation,
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Takagi Tomoko
Research and Development Division, ANELVA Corporation, 5-8-1 Yotsuya, Fuchu, Tokyo 183, Japan
著作論文
- The Mechanism at Work in 40 MHz Discharge SiH_4/NH_3/N_2 Plasma Chemical Vapor Deposition of SIN_x Films at Very High Rates
- Performance of a-Si:H Thin Film Transistors Fabricated by Very High Frequency Discharge Silane Plasma Chemical Vapor Deposition
- High-Mobility and High-Stability a-Si:H Thin Film Transistors with Smooth SiN_x/a-Si Interface
- Electrical Instability of Hydrogenated Amorphous Silicon Thin-Film Transistors for Active-Matrix Liquid-Crystal Displays
- Performance of a-Si:H Thin Film Transistors Fabricated by Very High Frequency Discharge Silane Plasma Chemical Vapor Deposition