Chemical State of Phosphorus at the Silicon Surface

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概要

• 論文の詳細を見る

• We used synchrotron radiation photoelectron spectroscopy (SRPES) to investigate the chemical state of phosphorus that piles up at the silicon surface covered with a native oxide and found that the piled-up phosphorus does not make bonds with oxygen.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1997-07-15

著者

• MAEYAMA Satoshi

  NTT Laboratories

• YOSHIMURA Yusuke

  The University of Tokyo

• ONO Kanta

  The University of Tokyo

• FUJIOKA Hiroshi

  The University of Tokyo

• OSHIMA Masaharu

  The University of Tokyo

• Sato Yoshiyuki

  Ntt Laboratories

• Ono Kanta

  The University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113, Japan

• Fujioka Hiroshi

  The University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113, Japan

• Yoshimura Yusuke

  The University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113, Japan

• Oshima Masaharu

  The University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113, Japan

関連論文

• Fraction of Interstitialcy Component of Phosphorus and Antimony Diffusion in Silicon
• Fraction of Interstitialcy Component of Phosphorus and Antimony Diffusion in Silicon
• Simulation of 2-Dimensional Hole Gas for PMOS Devices with Phosphorus Pile-Up
• Characterization of Phosphorus Pile-Up at the SiO_2/Si Interface
• Chemical State of Phosphorus at the Silicon Surface
• Phosphorus Diffusion from Doped Polysilicon through Ultra-Thin SiO_2 Films into Si Substrates
• Novel Magnetic Domain Structure in Iron Meteorite Induced by the Presence of L1_0-FeNi
• Chemical State of Phosphorus at the Silicon Surface
• Application of Thermal Desorption Spectroscopy to the Study of Defects Induced by Arsenic Implantation

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