An Anisotropy of Gain in N_2-Laser Pumped GaAs under Applied Electric Field
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概要
- 論文の詳細を見る
In the temperature range 80〜1 K, stimulated emission from N_2-laser pumped GaAs under an electric field has been observed and the anisotropy of the net gain for the polarity of the field has been found. The obtained maximum difference in the net gain in our experiments was 17 cm^-1 for applied field of 1.5 kV/cm at 130 K. The anisotropy of the net gain increased with temperature for the same field intensity and rapidly increased with increasing electric field over the threshold value of about l kV/cm. The origin of the anisotropy of the net gain has been qualitatively understood by the unidirectional laser action, caused by the drifting motion of carriers in a semiconductor.
- 社団法人応用物理学会の論文
- 1977-06-05
著者
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YAMANISHI Masamichi
Department of Quantum Matter, Graduate School of Advanced Sciences of Matter, Hiroshima University
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Kubo Uichi
Department of Electrical Engineering, Faculty of Science and Technology, Kinki University
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Kubo Uichi
Department Of Electrical Engineering Kinki University
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Kubo Uichi
Department Of Electrical Engeneering Faculty Of Science And Technology Kinki University
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Kawamura T
Department Of Mathematics And Physics University Of Yamanashi
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Kawamura Takao
Department Of Electrical Engineering University Of Osaka Prefecture
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Kawamura Takao
Laboratory Of Plant Physiology Graduate School Of Agriculture Kyoto University:(present Address)sumi
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Minami Tadatsugu
Department Of Electrical Engineering Kanazawa Institute Of Technology
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Kawamura Takao
Department Of Electrical Engineering College Of Engineering University Of Osaka
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Yamanishi Masamichi
Department Of Electrical Engineering University Of Osaka Prefecture
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Yamanishi Masamichi
Department Of Electrical Engineering College Of Engineering University Of Osaka Prefecture
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KAWAMURA Takao
Department of Chemistry, Faculty of Science, Kyoto University:(Present office)Takarazuka Res. Center, Sumitomo Chemical Co., Ltd.
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Kawamura Takao
Department of Applied Chemistry, Faculty of Engineering, Tohoku University
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