High-Speed Semiconductor Light Emitters Based on Quantum-Confined Field Effect: Developed Devices and Inclusion of Quantum Microcavities
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概要
- 論文の詳細を見る
The collective effort of the author's group on the study of AlGaAs quantum-confined field-effect light emitters is outlined, starting from the physics underlying the light emitters. The developed three-terminal light emitters with functions of current injection and field control of luminescent characteristics demonstrate high-speed switchings of emission intensity at room temperature. The scheme for the high-speed switching of spontaneous emissions does not rely on changes in carrier population at all, but purely on effects of the electric fields on the oscillator strengths in quantum-well active layers of the devices pumped with a very low injection current density, ∼10 A/cm^2. The response time, ∼300 ps of the spontaneous luminescence intensity for a pulsed input voltage, is observed to be completely free of the recombination lifetime limitation. Alteration of spontaneous emissions through continuous tuning of emission wavelength by electric fields applied to GaAs quantum wells, together with modification of vacuum field fluctuations of photon systems inside one-dimensional microcavities, is elaborated experimentally to further improve the device characteristics such as external efficiency and spatial coherency of light output, of the field-effect light emitters. The result of the alteration of spontaneous emission indicates the possibility of highly efficient and extremely high-speed light emitters, even with the bonus of a novel function, beam steering.
- 社団法人応用物理学会の論文
- 1992-09-15
著者
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Yamanishi Masamichi
Department Of Physical Electronics Faculty Of Engineering Hiroshima University
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Yamanishi Masamichi
Department Of Electrical Engineering College Of Engineering University Of Osaka Prefecture
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