Photoluminescence from Uudoped GaAs under Applied Electric Field : The Transition Mechanism at High Excitation Levels near 77 K
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概要
- 論文の詳細を見る
The emission process in undoped GaAs has been studied near 77 K under high optical excitation. We found that the density of state under highly-excited conditions forms the tail state, based on an impact ionization-model by accelerated free carriers under an electric field up to 3 kV/cm. It has been found that the luminescence spectrum is well understood by taking into account the band tail in addition to the band-gap reduction due to the many body effects. Stimulated emission is dominated by the transition between the conduction band tail and the valence band. Furthermore, detailed discussions are given on the origin of the band tailing.
- 社団法人応用物理学会の論文
- 1976-06-05
著者
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YAMANISHI Masamichi
Department of Quantum Matter, Graduate School of Advanced Sciences of Matter, Hiroshima University
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Kubo Uichi
Department of Electrical Engineering, Faculty of Science and Technology, Kinki University
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Kubo Uichi
Department Of Electrical Engineering Kinki University
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Kubo Uichi
Department Of Electrical Engeneering Faculty Of Science And Technology Kinki University
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Kawamura T
Department Of Mathematics And Physics University Of Yamanashi
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Kawamura Takao
Department Of Electrical Engineering University Of Osaka Prefecture
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Kawamura Takao
Laboratory Of Plant Physiology Graduate School Of Agriculture Kyoto University:(present Address)sumi
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Minami Tadatsugu
Department Of Electrical Engineering Kanazawa Institute Of Technology
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Kawamura Takao
Department Of Electrical Engineering College Of Engineering University Of Osaka
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Yamanishi Masamichi
Department Of Electrical Engineering University Of Osaka Prefecture
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Yamanishi Masamichi
Department Of Electrical Engineering College Of Engineering University Of Osaka Prefecture
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KAWAMURA Takao
Department of Chemistry, Faculty of Science, Kyoto University:(Present office)Takarazuka Res. Center, Sumitomo Chemical Co., Ltd.
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Kawamura Takao
Department of Applied Chemistry, Faculty of Engineering, Tohoku University
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