Dynamic Mechanism of Fast Switching in Light Valve Using Liquid Crystal
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1985-08-20
著者
-
SUGIMURA Akihiko
Department of Information Systems Engineering, Osaka Sangyo University
-
Sugimura Akihiko
Department Of Electrical Engineering College Of Engineering University Of Osaka Prefecture
-
Kawamura Takao
Department Of Electrical Engineering University Of Osaka Prefecture
-
Kawamura Takao
Department Of Electrical Engineering College Of Engineering University Of Osaka Prefecture
-
Kawamura Takao
Laboratory Of Plant Physiology Graduate School Of Agriculture Kyoto University:(present Address)sumi
-
Kawamura Takao
Department Of Electrical Engineering College Of Engineering University Of Osaka
関連論文
- X-Ray Standing Wave Analysis of GaAs/Si Interface
- X-Ray Standing Wave Analysis of Al/GaAs/Si(111)
- Breakdown Characteristics of SF_6 Gap Disturbed by a Metallic Protrusion under Oscillating Transient Overvoltages
- V-t Characteristics of SF6 Gap Disturbed by a Needle-Shaped Protrusion under Oscillating Transient Overvoltages
- Two-Dimensional In_Ga_As/GaAs Quantum Dot Superlattices Realized by Self-Organized Epitaxial Growth
- Magnetoluminescence Studies of Highly Packed InGaAs Self-organized Quantum Dots on GaAs(311)B
- The Procedure to Realize Two-Dimensional Quantum Dot Superlattices : From Incoherently Coupled to Coherently Coupled Quantum Dot Arrays
- Simultaneous Measurement of Rotational Viscosity, Pretilt Angle, and Dielectric Anisotropy from Transient Current in Nematic Liquid Crystal Cells
- A Method for Determination of Rotational Viscosity and Pretilt Angle from Transient Current in Twisted Nematic Liquid Crystal Cells
- Transient Current Study of Ultraviolet-Light-Soaked States in n-Pentyl-p-n-Cyanobiphenyl
- Determination of Rotational Viscosity of Nematic Liquid Crystals from Transient Current: Numerical Analysis and Experiment
- Method for Determination of Rotational Viscosity in Nematic Liquid Crystals
- Surfaces and Interfaces of High-T_c Superconductors for Contact and Junction Formation Studied with Synchrotron Radiation Photoemisison Spectroscopy : High Temperature Superconducting Thin-Films(Solid State Devices and Materials 1)
- Structure and Bonding at the CaF_2/GaAs(111) Interface : Surfaces, Interfaces and Films
- Cloning, Expression, and Characterization of a Root-Form Phosphoenolpyruvate Carboxylase from Zea mays : Comparison with the C_4-Form Enzyme
- CLONING OF A cDNA ENCODING ROOT-FORM PHOSPHO ENOLPYRUVATE CARBOXYLASE FROM MAIZE AND CONSTRUCTION OF AN EXPRESSION SYSTEM IN ESCHERICHIA COLI
- Study on dc and ac Switching Behavior in Liquid Crystal Displays with Polymer Boundaries using a 4-Component Circuit
- Hole Transport in Glow-Discharge Produced a-Si:H:F Film
- Deposition Mechanism of a-Si:H Film in Disilane-Hydrogen Plasma
- Preparation and Some Properties of Highly Resistive a-Si:H:F Film
- Elastic Anchoring Energy Related to Orientational Order Parameter of Nematic Liquid Crystal
- Surface-Induced Nematic Ordering using SiO_2 Grating
- Dynamic Mechanism of Fast Switching in Light Valve Using Liquid Crystal
- Fast Switching Array using Liquid Crystal for Electrophotographic Printer : C-4: THIN FILM DEVICES
- High Surface Ordering of Nematic Liquid Crystal Using Periodicity Grating
- Mapping of Non-methylated and Methylated Restriction Sites in the Promoter Region of the Maize Gene for Phosphoenolpyruvate Carboxylase Involved in C_4 Photosynthesis(Biological Chemistry)
- Metal-Semiconductor Electroluminescent Diodes in ZnO Single Crystal
- An Anisotropy of Gain in N_2-Laser Pumped GaAs under Applied Electric Field
- Photoluminescence from Uudoped GaAs under Applied Electric Field : The Transition Mechanism at High Excitation Levels near 77 K
- A New Two-dimensional DFB Laser with Distributed Bragg and Acousto-Optic Reflectors : B-7: SEMICONDUCTOR LASERS (II)
- Observation of Ultraviolet-Luminescence from the ZnO MIS Diodes
- Emission from an Optically Pumped GaAs under Drifting Field
- Some Characteristics of Flow Pattern and Heat Transfer past a Circular Cylindrical Cavity
- Fabrication and Properties of a-Si : H Photoreceptor and Its Application to Laser Beam Printer : C-3: SENSORS
- High-Rate Deposition of a-Si: H Film Using the Decomposition of Mono-Silane
- Poto-Response Characteristics of Electrophtographic Plates in Nanosecond Periods
- Growth Mechanism of Surface Dots Self-Assembled on InP (311)B Substrate
- Photoemission and RHEED Studies of Bonding Properties at the CaF_2/GaAs(001) Interface
- Ba_3Y_2Cu_2PtO_: Newly Obtained Phase During Single Crystal Growth of Ba_2YCu_3O_ from Platinum Crucide
- Drift Mobility Measurement of Se Single Crystal by Light Pulse Technique
- (Invited) GaAs Acoustic Distributed Feedback Lasers : B-4: LASERS (1)