Characterization of Nitrogen-Doped ZnSe and ZnS_<0.06>Se_<0.94> Films Grown by Metal-Organic Vapor-Phase Epitaxy : III-V Compound Semiconductors Devices and Materials(<Special Section>Solid State Devices and Materials 1)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1988-11-20
著者
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MASATO Hiroyuki
Electronics Research Laboratory, Matsushita Electronics Corporation
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SUEMUNE Ikuo
Faculty of Engineering, Hiroshima University
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YAMANISHI Masamichi
Faculty of Engineering, Hiroshima University
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KAN Yasuo
Faculty of Engineering, Hiroshima University
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Kan Yasuo
Department Of Physical Electronics Hiroshima University:(present Address) Central Research Labs. Sha
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Kanda T
Bu Electronic Materials Cariant (japan) K.k.
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YAMADA Kouichi
Faculty of Engineering, Hiroshima University
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MASATO Hiroyuki
Faculty of Engineering, Hiroshima University
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KANDA Takahsi
Faculty of Engineering, Hiroshima University
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Kan Yasuo
Faculty Of Engineering Hiroshima University
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Yamanishi Masamichi
Faculty Of Engineering Hiroshima University
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Suemune Ikuo
Faculty Of Engineering Hiroshima University
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Yamada Kouichi
Faculty Of Engineering Hiroshima University
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Masato H
Electronics Research Laboratory Matsushita Electronics Corporation
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