Mass Spectrometric Study and Modeling of Decomposition Process of Tris-Dimethylamino-Arsenic on (001) GaAs Surface
スポンサーリンク
概要
- 論文の詳細を見る
Decomposition process of a new arsenic precursor, As[N (CH_3)_2]_3, for metalorganic molecular beam epitaxy (MOMBE) was studied. It was found that a Ga-stabilized (4×2) GaAs surface turned to an As-stabilized (2×4) surface at a low substrate temperature of 〜400℃ and with a low As[N (CH_3)_2]_3 pressure of 〜10^<-7> Torr when it was supplied without thermal precracking. This is a marked contrast to conventional As[C_2H_5]_3 with which the As-stabilized GaAs surface is never formed without precracking. The decomposition process was modeled assuming an intermediate-state species adsorbed on the GaAs surface based on a quadrupole mass spectrometric study. The measured temperature dependence was very well explained with the present model.
- 社団法人応用物理学会の論文
- 1991-09-01
著者
-
KISHIMOTO Akihiro
Faculty of Engineering, Hiroshima University
-
HAMAOKA Kazuhiko
Faculty of Engineering, Hiroshima University
-
KOUI Tomoaki
Faculty of Engineering, Hiroshima University
-
Koui Tomoaki
Faculty Of Engineering Hiroshima University
-
Suemune I
Hiroshima Univ. Higashihiroshima
-
Kishimoto A
Faculty Of Engineering Hiroshima University
-
Yamanishi Masamichi
Faculty Of Engineering Hiroshima University
-
Suemune Ikuo
Faculty Of Engineering Hiroshima University
-
FUJII Kazuyuki
Faculty of Engineering, Hiroshima University
-
Hamaoka Kazuhiko
Faculty Of Engineering Hiroshima University
関連論文
- P-Type Doping Limits in ZnMgSSe and ZnSSe Compound Semicomductors
- On p-Type Doping Limits in ZuMgSSe Quaternary Semiconductors
- MOMBE Growth of Nitrogen-Doped p-Type ZnSe
- Temperature Dependence of ZnS Growth with Atmospheric-Pressure Metalorganic Vapor Phase Epitaxy Using Ditertiarybutyl Sulfide
- High-Quality Carbon-Doped Boron Nitride Membrane for X-Ray Lithography Mask
- Continuous-Wave Operation of a Lateral Current Injection Ridge Waveguide AlGaAs/GaAs Laser with a Selectively-Doped Heterostructure
- In-Situ RHEED Monitoring of Hydrogen Plasma Cleaning on Semiconductor Surfaces : Beam-Induced Physics and Chemistry
- In-Situ RHEED Monitoring of Hydrogen Plasma Cleaning on Semiconductor Surfaces
- Incidence Angle Dependence in Hydrogen Plasma Processing of Semiconductor Surfaces : Beam Induced Physics and Chemistry
- Comparison of Electrical and Optical Properties of n-i-i and p-i-n ZnSSe Heterostructure Diodes
- Iodine Doping in ZnSe in High-Temperature Range by Metalorganic Vapor-Phase Epitaxy
- Lasing Properties and Lasing Mechanism in a ZnSe/ZnSSe Multiple Quantum Well Heterostructure
- Investigation of Linearity of Photoacoustic Characteristics on Semiconductors Measured by Michelson Interferometry : Photoacoustic Spectroscopy
- Electric Field Effect on Subband State Transitions Peaks in the Photoluminescence from a GaAlAs Quantum Well Structure
- Structural and Luminescence Properties of InAs Quantum Dots : Effect of Nitrogen Exposure on Dot Surfaces
- Metalorganic Molecular-Beam Epitaxial Growth and Optical Properties of Er-Doped GaNP
- Selective Growth of Highly Packed Array of ZnCdS Quantum Dots with a Mask Prepared by Atomic Force Microscope Nanolithography
- Intrinsic and Extrinsic Excitonic Features in MgS/ZnSe Superlattices Revealed by Microspectroscopy
- Nucleation in the Nanometer Scale Selective Area Growth of II-VI Semiconductors
- Low-Temperature Selective Growth of ZnSe and ZnS on (001) GaAs Patterned with Carbonaceous Mask by Metalorganic Molecular-Beam Epitaxy
- ZnSe/ZnS Distributed Bragg Reflectors in the Blue Region Grown on (311)B GaAs Substrates
- Selective Growth Conditions of ZnSe/ZnS Heterostructures on (001) GaAs with Metalorganic Molecular Beam Epitaxy
- Self-Organized CdSe Quantum Dots on (100)ZnSe/GaAs Surfaces Grown by Metalorganic Molecular Beam Epitaxy ( Quantum Dot Structures)
- Atomic Force Microscope Nanolithography on SiO_2/Semiconductor Surfaces ( Quantum Dot Structures)
- Purge Effect on Heterointerfaces of ZnSe/MgS Superlattices Grown by Metalorganic Vapor Phase Epitaxy
- Excitonic Properties in ZnSe/MgS Superlattices
- Initial Growth Processes of ZnSe on Cleaned GaAs(001) Surfaces by Metalorganic Vapor Phase Epitaxy
- Epitaxial growth of zinc-blende ZnSe/MgS superlattices on (001) GaAs
- Minimization of X-Ray Mask Distortion by Two-Dimensional Finite Element Method Simulation : Lithography Technology
- Minimization of X-Ray Mask Distortion by Two-Dimensional Finite Element Method Simulation
- Excitonic properties of zinc-blende ZnSe/MgS superlattices studied by reflection spectroscopy
- Luminescence of Excitons Localized by Monolayer Interface Fluctuations in ZnSe/MgS Superlattices Grown by Metalorganic Vapor Phase Epitaxy ( Quantum Dot Structures)
- Characterization of Nitrogen-Doped ZnSe and ZnS_Se_ Films Grown by Metal-Organic Vapor-Phase Epitaxy : III-V Compound Semiconductors Devices and Materials(Solid State Devices and Materials 1)
- Control of ZnSe Film Stoichiometry at ZnSe/GaAs Interface Grown by MOCVD
- High Output Power (>20 W) and High Quantum Efficiency in a Photopumped ZnSe/ZnSSe Blue Laser Operating at Room Temperature
- Near-Room-Temperature Photopumped Blue Lasers in ZnS_xSe_/ZnSe Multilayer Structures
- Ultrafast Response Evaluation of Virtual Excitation by Off-Resonant Optical Pulse Mixing in GaAs/AlGaAs Quantum Well Structures
- High-Speed Intensity Modulation by Quantum-Confined Field Effect Combined with Modulation of Injection Current in Light-Emitting Triodes
- Role of Indium on Nitrogen Incorporation in GaNAs Grown by Metalorganic Molecular-Beam Epitaxy
- Reexamination of N composition dependence of coherently grown GaNAs band gap energy with high-resolution x-ray diffraction mapping measurements
- Catalytic Precracking of Amino-As in Metalorganic Molecular-Beam Epitaxy of GaAs
- Evaluation of Hydrogenation on Semiconductor Surfaces Treated with Hydrogen-Plasma Beam Excited by Electron Cyclotron Resonance : Beam Induced Physics and Chemistry
- Evaluation of Hydrogenation on Semiconductor Surfaces Treated with Hydrogen-Plasma Beam Excited by Electron Cyclotron Resonance
- Decomposition Mechanism of Triethyl-Arsenic on a GaAs Surface for Metalorganic Molecular-Beam Epitaxy : Role of Hydrogen Radicals
- Mass Spectrometric Study and Modeling of Decomposition Process of Tris-Dimethylamino-Arsenic on (001) GaAs Surface
- Nucleation and Faceting in Selectively Grown ZnS Pyramidal Dot Array for Short-Wavelength Light Emitters
- Saturable Inter-Valence-Band Absorptions in 1.3μm-InGaAsP Lasers : B-4: LD AND LED-2
- Theoretical Estimation of Leakage Current in II-VI Heterostructure Lasers
- Low-Temperature Selective Epitaxial Growth of GaAs Using Triethylgallium and Amino-As in Metalorganic Molecular Beam Epitaxy
- High-Resolution Patterning of Luminescent Porous Silicon with Photoirradiation
- Increase in Nonradiative Recombination Lifetimes in Semi-Insulating GaAs Observed by a Photoacoustic Technique
- Photoirradiation Effect on Photoluminescence from Anodized Porous Silicons and Luminescence Mechanism
- Study of Luminescent Region in Anodized Porous Silicons by Photoluminescence Imaging and Their Microstructures